Results 161 to 170 of about 477,993 (266)

Breakdowns

open access: yesTheoretical Economics, 2015
Godfrey Keller, Sven Rady
openaire   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Nervous Breakdown

open access: yesInternational Journal of Clinical Practice, 1955
openaire   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Irradiation‐Induced Spin Bath Evolution and as‐Grown Hydrogen Defects in CVD Diamond Revealed by NV‐Based DEER Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas   +6 more
wiley   +1 more source

Electronic band and core-shell structure engineering enables ultrahigh energy storage in high-entropy ceramics. [PDF]

open access: yesNat Commun
Li Y   +12 more
europepmc   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

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