Results 181 to 190 of about 1,240,548 (287)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Lifetime Prediction and Aging Characteristics of HTV-SiR Under Coupled Electro-Thermo-Hygro-Mechanical Stresses. [PDF]

Polymers (Basel)
Shang B, Fu W, Yang L, Yang Q, Yuan Z, Wang Z, Fan Y.   +6 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Quantum phase transitions: from ordered magnets to spin glasses. [PDF]

Natl Sci Rev
Smidman M, Yuan H.
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

The Effects of K-BNNS Nanoparticles on PD Characteristics of Composite Aramid Paper. [PDF]

Nanomaterials (Basel)
Chen YH, Li XN, Zhang WX, Qin T, Cheng QK, Wu B.   +5 more
europepmc   +1 more source

Additive Manufacturing of NiTi Shape Memory Alloys for Elastocaloric Applications: A Review

Advanced Functional Materials, EarlyView.
Additive manufacturing enables complex NiTi architectures that overcome key limitations in elastocaloric refrigeration, including poor heat transfer and high mechanical work input. This review surveys recent advances in LPBF‐ and DED‐fabricated NiTi shape memory alloys for elastocaloric applications, highlighting process–structure–performance ...
Ignatius Andre Setiawan, Mohammad Mehrali, Jaka Tušek, Shiva Mohajerani, Xiebin Wang, Dermot Brabazon, Mohammad Elahinia, Mehrshad Mehrpouya   +7 more
wiley   +1 more source

Bovine tuberculosis (TB) in herds with long-duration of official freedom during a period of national resurgence of infections. [PDF]

Ir Vet J
Horan M, Barrett D, Smyth S, Byrne AW.
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Real-Time TEM Observation of the Microstructural Evolution in Silver Nanowires under Heating and Electrical Biasing. [PDF]

ACS Appl Electron Mater
Bejtka K, Allione M, Ricciardi C, Pirri CF, Milano G.   +4 more
europepmc   +1 more source