Results 151 to 160 of about 982,593 (292)

High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. [PDF]

Nanomaterials (Basel)
Li S, Wu M, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +7 more
europepmc   +1 more source

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. [PDF]

Materials (Basel), 2020
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.   +12 more
europepmc   +1 more source

Stretching the Printability Metric in Direct‐Ink Writing with Highly Extensible Yield‐Stress Fluids

Advanced Functional Materials, EarlyView.
This study introduces “drawability” as a new metric for assessing printability in direct‐ink writing, focusing on gap‐spanning performance and speed robustness. By designing yield‐stress fluids with high extensibility, we demonstrate that extensional strain‐to‐break significantly enhances printability.
Chaimongkol Saengow, Samya Sen, Joaquin Yus, Eliza E. Lovrich, Amanda G. Hoika, Kelly M. Chang, Arielle A. Pfeil, Nellie Haug, Amy J. Wagoner Johnson, Randy H. Ewoldt   +9 more
wiley   +1 more source

Effect of Metal Oxide Nanoparticles on the Breakdown Voltage of Transformer Oil Containing Cellulose Particles. [PDF]

Nanomaterials (Basel)
Negm TS, Mansour DA, Hossam-Eldin AA.
europepmc   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Lightning Impulse Ageing of HV Cable Insulation

, 2009
Lightning impulses can lead to accelerated ageing of extruded cables. Electrical behaviour of a dielectric material when experiencing a lightning impulse is different to that for DC or power frequency applied voltages.
Dao, N L, Swingler, S G, Lewin, P L
core  

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage. [PDF]

Nanoscale Res Lett, 2020
Zhang Y, Li Y, Wang J, Shen Y, Du L, Li Y, Wang Z, Xu S, Zhang J, Hao Y.   +9 more
europepmc   +1 more source

From Food to Power: Hydrogel Thermoelectrics for Ingestible Electronics

Advanced Functional Materials, EarlyView.
We introduce a fully edible thermoelectric–electrochromic platform that harvests heat from food and converts it into a visible color change. N‐type and p‐type hydrogel thermoelectric generators connected in series power anthocyanin‐based electrochromic displays, demonstrating the feasibility of safe, biodegradable, ingestible systems for on‐food ...
Antonia Georgopoulou, Bokeon Kwak, Dario Floreano, Esther Amstad   +3 more
wiley   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source