Analysis of Breakdown Voltages in AlGaN/GaN HEMTs With Low-${k}$ /High-${k}$ Double Passivation Layers [PDF]
, 2019 Kai Nakamura, Hideyuki Hanawa, K. Horio
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Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage [PDF]
, 2020 Xiaoming Yang +3 more
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Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
Advanced Functional Materials, EarlyView.Temperature‐dependent photoluminescence and first‐principles calculations reveal self‐trapped hole migration as the microscopic origin of thermal quenching in α‐ and β‐Ga2O3. The low migration barrier in α‐Ga2O3 enables defect trapping and enhances blue luminescence, while the higher barrier in β‐Ga2O3 preserves ultraviolet emission at elevated ...
Nima Hajizadeh +11 more
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Effect of Metal Oxide Nanoparticles on the Breakdown Voltage of Transformer Oil Containing Cellulose Particles. [PDF]
Nanomaterials (Basel)Negm TS, Mansour DA, Hossam-Eldin AA.
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Experimental study on breakdown voltage between parallel plates in high-pressure helium
, 2015 Yue Shan, Xingnan Liu, Zhengang Shi
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Advanced Functional Materials, EarlyView.Photomultiplication organic photodetectors (PM OPDs) are an attractive strategy for health‐monitoring. Here, PM‐OPDs are reported with a specific detectivity of 5.7 × 1012 Jones and external quantum efficiency values of 3500% under −10 V. The dynamics of carrier trapping in these devices are elucidated through trap selective spectroscopical techniques.
Marie Houot +9 more
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Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]
Sci RepWu TL +5 more
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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage. [PDF]
Nanoscale Res Lett, 2020 Zhang Y +9 more
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EFFECT OF THERMIONIC CATHODES EVAPORATION PRODUCTS ON HIGH VOLTAGE VACUUM BREAKDOWN
, 1984 Manish Kumar Sinha, Tzu-Wei Lin
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Thickness‐Dependent Skyrmion Evolution in Fe3GeTe2 During Magnetization Reversal
Advanced Functional Materials, EarlyView.Thickness‐ and field‐dependent magnetic domain behavior in 2D van der Waals Fe3GeTe2 is studied using Lorentz TEM and micromagnetic simulations. A patch‐like domain phase evolves from skyrmions during magnetization reversal, and step edges between thickness regions act as pinning sites.
Jennifer Garland +9 more
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