High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates [PDF]
Huili Grace Xing+5 more
openalex +1 more source
Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang+14 more
wiley +1 more source
Spectroscopic study of quantized breakdown voltage states of the quantum Hall effect
C.F. Lavine+2 more
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The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee+5 more
wiley +1 more source
Effect of oxygen on power frequency breakdown voltage and decomposition characteristics of the C5F10O/N2/O2 gas mixture. [PDF]
Zhang Y+7 more
europepmc +1 more source
Preparation Nano-Structure Polytetrafluoroethylene (PTFE) Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties. [PDF]
Hao J+5 more
europepmc +1 more source
Hydrogen-induced changes in the breakdown voltage of InP HEMTs [PDF]
R.R. Blanchard+2 more
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Ozone‐based gas‐phase metal‐assisted chemical etching enables unprecedented room‐temperature fabrication of high‐quality silicon nanowires. The superior oxidation potential of O3 drives rapid vertical etching (1 µm min−1) while maintaining exceptional structural integrity. The pristine nanowire surfaces enable high‐performance core‐shell photodetectors
Hyein Cho+11 more
wiley +1 more source
High Thermoelectric Performance in Low‐Cost Cu8SiSxSe6‐x Argyrodite
This study discovers the great potential of Cu8SiSxSe6‐x argyrodites as new, low‐cost, Te‐free thermoelectric materials. The proposed defect scheme suppresses the phase transition, enhances the weighted mobility and optimizes the grain boundary contacts.
Taras Parashchuk+7 more
wiley +1 more source
Investigation of high voltage breakdown and arc localization in rf structures
R. H. Goulding+2 more
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