Results 211 to 220 of about 215,040 (353)

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates [PDF]

open access: green, 2004
Huili Grace Xing   +5 more
openalex   +1 more source

Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang   +14 more
wiley   +1 more source

Strain Partitioning at the Oxide Interface for the Isothermal Phase Transition in Freestanding Tri‐Layers

open access: yesAdvanced Functional Materials, EarlyView.
The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee   +5 more
wiley   +1 more source

Hydrogen-induced changes in the breakdown voltage of InP HEMTs [PDF]

open access: green, 2005
R.R. Blanchard   +2 more
openalex   +1 more source

Ultrafast Room‐Temperature Nanofabrication via Ozone‐Based Gas‐Phase Metal‐Assisted Chemical Etching for High‐Performance Silicon Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
Ozone‐based gas‐phase metal‐assisted chemical etching enables unprecedented room‐temperature fabrication of high‐quality silicon nanowires. The superior oxidation potential of O3 drives rapid vertical etching (1 µm min−1) while maintaining exceptional structural integrity. The pristine nanowire surfaces enable high‐performance core‐shell photodetectors
Hyein Cho   +11 more
wiley   +1 more source

High Thermoelectric Performance in Low‐Cost Cu8SiSxSe6‐x Argyrodite

open access: yesAdvanced Functional Materials, EarlyView.
This study discovers the great potential of Cu8SiSxSe6‐x argyrodites as new, low‐cost, Te‐free thermoelectric materials. The proposed defect scheme suppresses the phase transition, enhances the weighted mobility and optimizes the grain boundary contacts.
Taras Parashchuk   +7 more
wiley   +1 more source

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