Results 231 to 240 of about 215,040 (353)

Dc breakdown voltage of carbon dioxide medium under needle to plane electrode [PDF]

, 2007
M. Takade, Kōichi Tanaka, A. Uemura, Bhupesh C. Roy, Tsuyoshi Kiyan, Takao Namihira, Mitsuru Sasaki, Hidenori Akiyama, Motonobu Goto, Masanori Hara   +9 more
openalex   +1 more source

Regulating the Interphase Strain in High‐Entropy Oxide Thin Films – An Approach to Attaining Giant Energy Storage Capability under Moderate Electric Fields

Advanced Functional Materials, EarlyView.
This work demonstrates an interphase strain engineering strategy to regulate capacitive energy storage performance in high‐entropy oxide thin films. Through introducing pyrochlore nanocolumns, the polarization response of perovskite unit cells is strengthened, yielding recoverable energy densities up to 93 J cm−3 with an efficiency of 83% under ...
Hao Luo, Yunlong Sun, Haotian Wen, Richard Webster, Yasuhiro Sakamoto, Zizheng Song, Yating Ran, Chenlu Jiang, Siyuan Zhang, Zibin Chen, Shery L. Y. Chang, Danyang Wang   +11 more
wiley   +1 more source

Field-plate engineering for high breakdown voltage β-Ga₂O₃ nanolayer field-effect transistors. [PDF]

RSC Adv, 2019
Bae J, Kim HW, Kang IH, Kim J.
europepmc   +1 more source

Polarity Effect in DC Breakdown Voltage Characteristics of Pressurized Carbon Dioxide up to Supercritical Conditions [PDF]

, 2008
Tsuyoshi Kiyan, M. Takade, Takao Namihira, Masanori Hara, Mitsuru Sasaki, M. Goto, Hidenori Akiyama   +6 more
openalex   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

Advanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong, Ching Shih, Guan‐Long Chen, Yu‐Chen Hsin, Chen‐Yu Yang, Hsin‐Han Lee, Kuan‐Ming Chen, Yu‐Ho Kao, Tsai‐Yu Wu, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +22 more
wiley   +1 more source

Built‐In Electric Field in 2D/2D LDH/Antimonene Heterostructure to Induce Stable β‐NiOOH at Ultralow Potential for Cost‐Effective Water Electrolysis

Advanced Functional Materials, EarlyView.
In this paper, a built‐in electric field (BEF) strategy is proposed to fabricate NiFe‐LDH/antimonene heterostructure as bifunctional electrocatalysts for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). The formed BEF generates a local potential that reduces the potential for the formation of β‐NiOOH, thereby enabling ultra‐low ...
Jingkun Wang, Xiaoning Li, Haojie Liang, Chenxi Zhang, Huayun Du, Ying Sun, Hui Li, Hongge Pan, Yuying Hao, Min Zhao, Tianbao Li, Tianyi Ma   +11 more
wiley   +1 more source

Synthetic Strategy for mRNA Encapsulation and Gene Delivery with Nanoscale Metal‐Organic Frameworks

Advanced Functional Materials, EarlyView.
This research utilizes the ZIF‐8 for the encapsulation and intracellular delivery of nucleic acids, specifically mRNA, for applications in gene delivery. Integrating PEI addresses the issue of mRNA leakage from ZIF‐8, resulting in the delivery and expression of green fluorescent protein (GFP) in vitro and firefly luciferase in vivo.
Harrison Douglas Lawson, Huy Hoang Nguyen, Keng‐Jung Lee, Nattarat Wongsuwan, Ayesha Tupe, Mengrou Lu, Mariah Lynn Arral, Anne Behre, Zihan Ling, Kathryn Ann Whitehead, Adam Walter Feinberg, Xi Ren, Si‐Yang Zheng   +12 more
wiley   +1 more source

Breakdown Characteristics of Vacuum Gaps under Continuous AC Voltage Application and their Improvements by means of Discharge Conditionings

, 2003
Shinji Sato, K. Koyama, Takayuki Itotani, Seiichi Miyamoto   +3 more
openalex   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Analyzing randomly occurring voltage breakdowns

, 1977
C. W. Wiltshire
openalex   +1 more source