Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique [PDF]
We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2.
Andrew Gallagher +5 more
doaj +2 more sources
Zonal Refining and Bridgman Technique for CsI:Tl Scintillation Crystal Growth
This work describes the development of the production of the crystal cesium iodide doped with thallium [CsI :Tl] for use as a radiation detector. For salt purification, zonal refining in a horizontal oven at a constant temperature of 700°C was used.
Karoline Feitoza Suzart +3 more
doaj +2 more sources
Growth and characterization of CdMnTe by the vertical Bridgman technique [PDF]
Abstract We grew Cd 1− x Mn x Te crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The structural quality of the crystal was evaluated by white beam X-ray topography in the National Synchrotron Light Source (NSLS) facility at Brookhaven National Laboratory (BNL). We observed that the crystal was free from a
Utpal N Roy, G S Camarda, R Gul
exaly +2 more sources
Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique
We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction.
U. N. Roy +8 more
doaj +2 more sources
Primary and secondary dendrite spacing of Ni-based superalloy single crystals [PDF]
Ni-based superalloy single crystals were grown by different methods (gradient method and Bridgman technique with spontaneous nucleation and with seed).
SLOBODANKA KOSTIC +2 more
doaj +3 more sources
5″ diameter PIN-PMN-PT crystal growth by the Bridgman method [PDF]
Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric crystals in 5″ diameter by 5″ length were grown by the Bridgman (BR) method for the first time.
Haisheng Guo +4 more
doaj +1 more source
Crystal Growth, Luminescence and Scintillation Characterizations of Cs2KLaCl6:Ce and Cs2KCeCl6
Elpasolite halides scintillation crystals have been proven to be very important materials for X-ray and γ-ray detector applications. The crystals of Cs2KLaCl6:4% Ce (CKLC) and Cs2KCeCl6 (CKCC) belong to novel scintillation of the Chloro-elpasolite ...
Haoyu Wang +5 more
doaj +1 more source
Growth of Eu doped LiBr/BaBr2 eutectic and its thermal neutron response
In this study, Eu:6LiBr/BaBr2 with a high Li concentration was developed as a novel neutron scintillator. Here, an Eu-doped BaBr2 phase acted as a scintillator and 6Li-containing LiBr phase acted as a neutron capturer.
Yui Takizawa +7 more
doaj +1 more source
Growth and characterization of detector-grade CdMnTeSe
The Cd0.95Mn0.05Te0.98Se0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector
J. Byun, J. Seo, J. Seo, B. Park
doaj +1 more source
Characterization of Mn-Doped PIN-PMN-PT Single Crystal Grown by Continuous-Feeding Bridgman Method
Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (Mn:PIN-PMN-PT) single crystals are attractive piezoelectric materials owing to their high mechanical quality factor.
Kazuhiko Echizenya +2 more
doaj +1 more source

