Results 121 to 130 of about 10,259 (303)
Large Temperature‐invariant Anomalous Nernst Effect in Non‐collinear Antiferromagnet Mn3Pt
Based on the noncollinear antiferromagnetic Mn3Pt thin films, the composition‐tunable Mn‐3d orbital states directly govern the Berry curvature. As a result, a giant and temperature‐invariant anomalous Nernst coefficient of 0.71 µV/K is achieved under Mn‐rich conditions.
Pengwei Gong +16 more
wiley +1 more source
Here, we establish a quantitative relationship between the electrostriction coefficient (Q33) of FRPs and their interplanar spacing (d): Q33 = 100(Δd/d0+1) × Q33(s). Using this model, we fabricated high‐performance soft robots, including a biomimetic crawler (with a speed of 27 cm/s) and a butterfly (with a thrust‐to‐weight ratio of 0.71).
Ba Qin +8 more
wiley +1 more source
A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier
[[abstract]]This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film ...
Jeng-Han Tsai;Yi-Lin Lee;Tian-Wei Huang;Cheng-Ming Yu;John G. J. Chern
core
A compact broadband PHMET MMIC power amplifier for K through Ka-band applications
A compact and broadband MMIC power amplifier operating from 18 GHz to 35 GHz is developed for K- through Ka-band applications implementing a rigorous electromagnetic (EM) simulation of closely spaced matching networks.
Park, Chul Soon, Lee, YC
core +1 more source
This study proposes a novel dual input power amplifier (PA) with a frequency-periodic load modulated output matching network supported by a broadband biasing network.
Takuma Torii +3 more
doaj +1 more source
Sub‐Terahertz Memristor Switches Using MoS2 by Liquid–Liquid Interface Assembly
This work introduces application‐ready sub‐terahertz memristor switches fabricated from electrochemically exfoliated MoS2 nanosheets assembled at a liquid–liquid interface. The devices exhibit robust unipolar resistive switching, low insertion loss, and high isolation across 10–110 GHz.
Tomás Mingates +15 more
wiley +1 more source
PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer.
A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology.
Limiti, E. +10 more
core
This work demonstrates a paradigm‐shifting strategy to simultaneously achieve broadband wavelength tunability and single‐mode control within a single perovskite microwire structure. Using a facile heating‐assisted solid–solid anion‐exchange strategy, we synthesized phase‐pure CsPbClxBr3‐x microwires that exhibit the widest reported continuous lasing ...
Bingwang Yang +7 more
wiley +1 more source
A Broadband Power Amplifier Applied in GSM/TD-SCDMA/WLAN System
Part 6: Circuit DesignInternational audienceA broadband power amplifier operating from 0.8 GHz to 2.4 GHz is designed in 0.13-μm SiGe HBT process. The power amplifier adopts pseudo-differential structure, adaptive bias control technique, broadband ...
Ding, Yan +5 more
core +1 more source
Programmable Elastic Wave Control Via Mechanical‐Acoustic Interaction in Bistable Metamaterials
A mechanically programmable metamaterial based on mechanical‐acoustic interaction enables reconfigurable elastic wave control through bistable state switching. Spatial encoding of peak and valley states tunes band structures and transmission, achieving low‐frequency vibration suppression, waveguiding, and energy localization.
Yuanyuan Li +7 more
wiley +1 more source

