Results 201 to 210 of about 11,081,047 (234)

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

open access: yesAdvanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti   +5 more
wiley   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado   +7 more
wiley   +1 more source

Health impacts of expanding the health workforce across cadres under an incremental budget in Malawi. [PDF]

open access: yesBMJ Glob Health
She B   +16 more
europepmc   +1 more source

Decoupled Dielectric Optimization and YbOx Contact Engineering in All‐Spray‐Processed Oxide Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Fully spray‐processed oxide thin‐film transistors are advanced by decoupling dielectric quality from contact energetics. Thermochemically densified MgO suppresses defect‐mediated leakage and improves electrostatic control, while an ultrathin YbOx interlayer induces a 1.67 eV work‐function shift that boosts mobility from ∼40 to ∼94 cm2 V−1 s−1.
Ahmed Mohamed   +5 more
wiley   +1 more source

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