Results 201 to 210 of about 18,574 (266)

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Decoding budget awareness: A multivariate analysis of generation Z undergraduates. [PDF]

open access: yesPLoS One
Güngör Göksu G   +3 more
europepmc   +1 more source

Sustainability starts with spending: public financial management lessons from Kenya's universal health care pilot. [PDF]

open access: yesBMC Health Serv Res
Adjagba AO   +6 more
europepmc   +1 more source

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