Results 131 to 140 of about 792 (179)

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

open access: yesAdvanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu   +7 more
wiley   +1 more source

Nanodiamond Sensing in Dynamic Environments With Fast‐Tracking Through Four‐Point Positioning

open access: yesAdvanced Functional Materials, EarlyView.
A four‐point positioning tracking (4PPT) platform enables fast 3D feedback translational tracking of fluorescent nanodiamonds while simultaneously recording ODMR spectra. By integrating real‐time translational tracking with quantum sensing, mobile nanodiamonds are used for in‐situ nanothermometry, nanorheometry, and 6D translation–rotation tracking in ...
Guoli Zhu   +10 more
wiley   +1 more source

Simulation Analysis of the Semi-Trailer Steered Wheels Control Algorithm. [PDF]

open access: yesSensors (Basel)
Abramowski M   +4 more
europepmc   +1 more source

Ultrafast Thermal Shock Synthesis of CuNiSnLa Medium‐Entropy Metallic Glass for Sustainable Nitrogen Fixation via Plasma‐Coupled Electrocatalysis

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces an ultrafast thermal shock strategy to synthesize a CuNiSnLa medium‐entropy metallic glass (MEMG). The rapid heating and cooling process generates a robust, highly active catalyst for electrocatalytic nitrate reduction to ammonia (NRA).
Hongbo Chen   +7 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

open access: yesAdvanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig   +3 more
wiley   +1 more source

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