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Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Evolution and Revolution of System Architecture with New Generation Technology [PDF]

open access: yesAdvanced Ultrasound in Diagnosis and Therapy, 2019
Tomohisa Imamura, Koichiro Kurita, Hiroyuki Shikata, Tetsuya Kawagishi
doaj  

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