Results 121 to 130 of about 98,319 (265)
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
A multifunctional structural power composite is developed by integrating high‐mass‐loading Zn‐ion hybrid supercapacitors with metal mesh current collectors and aramid nanofiber‐based composite electrolytes, enabling simultaneous load‐bearing capability and enhanced areal energy storage.
Yuseung Choi +8 more
wiley +1 more source
Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh +3 more
wiley +1 more source
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Polarity‐matched Zr–MOFs program Nafion's nanoscale morphology during solution casting. Hydrophilic UiO‐66 preserves hydrated pathways, while hydrophobic UiO‐67 increases the proton hopping sites by densifying ionic clusters. Combining both fillers yields a membrane that delivers 176 mS cm−1 conductivity, reaches 1.46 W cm−2 under 200 kPa, and triples ...
Yonghwi Cho +13 more
wiley +1 more source
A gradient‐engineered all‐paper sensor is fabricated by integrating MXene and in situ grown AgNPs within hierarchical cellulose networks. The device breaks the sensitivity–detection range trade‐off through cascaded conductive pathways, enabling ultrahigh pressure sensitivity, humidity–pressure decoupled dual‐mode sensing, and outstanding EMI shielding,
Ao Li +7 more
wiley +1 more source

