MOS capacitances used in mixed-signal circuits and their operative range [PDF]
Advances in Radio Science, 2003 To avoid additional layers for high linearity capacitances in modern CMOS process families, compensated depletion mode MOS capacitances can be used. As shown in previous publications, these MOS capacitances are suitable for low voltage applications.
W. Kraus +3 more
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Parasitic Capacitances in Magnetic Components: Overview and Perspectives
IEEE Open Journal of Power ElectronicsParasitic capacitances are important in magnetic components, especially for the high-frequency power electronic converters enabled by wide-bandgap semiconductors.
Shaokang Luan, Hongbo Zhao
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Autocompensative System for Measurement of the Capacitances
Radioengineering, 2002 A simple and successful design of an autocompensative system withflip-flop sensor for measurement of capacitances is presented. Theanalysis of the sensor is based on the state description with thevertical rise segments of the control pulse.
M. Kollar, V. Spany, T. Gabas
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Design of sensor electronics for electrical capacitance tomography [PDF]
, 1992 The design of the sensor electronics for a tomographic imaging system based on electrical capacitance sensors is described. The performance of the sensor electronics is crucial to the performance of the imaging system. The problems associated with such a
Huang, SM +4 more
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Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization
Applied Sciences, 2022 Based on the time-dependent master equation and taking the dynamic gate current into account, a new single-electron transistor (SET) model is proposed, which can represent intrinsic terminal capacitances and transcapacitances.
Alka Singh +3 more
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A Simple and Non-Destructive Method to Measure Per-Terminal Baseplate Coupling of Power Modules
IEEE Open Journal of Power Electronics, 2023 The fast slew rates of wide bandgap semiconductors can produce common-mode currents that flow through the baseplates of multi-chip power modules. These currents increase the electromagnetic signature of these devices and force designers to reduce edge ...
Brian T. DeBoi +2 more
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Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides [PDF]
, 2010 Here we calculate the intrinsic quantum capacitance of RuO2nanowires and RuO2/SiO2nanocables (filled interiors of nanotubes, which are empty), based upon available ab initio density of states values, and their conductances allowing determination of ...
C. M. Krowne
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International Journal of Electrochemical Science, 2009 Hydrothermal synthesis of CuO-SnO2 and CuO-SnO2-Fe2O3 mixed oxides is done in an autoclave using the precursors and urea. The powders are characterized by XRD, XRF, SEM and XPS.
M. Jayalakshmi, K. Balasubramanian
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Reduction of operational amplifiers finite gain effects in switched-capacitor biquads [PDF]
Serbian Journal of Electrical Engineering, 2005 A combined approach for reducing the errors in the pole frequency f p, the pole Q - factor Qp and the magnitude at the pole frequency Hp, of switched capacitor biquads is presented.
Radev Nikolay, Ivanov Kantcho
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Measurement of Power Dissipation due to Parasitic Capacitances of Power MOSFETs
, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Dimitrijev, Sima +7 more
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