Results 261 to 270 of about 46,000 (303)

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

Semiconductors, 2008
CdTe/Hg1 − xCdxTe heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg1 − xCdxTe film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy.
I. S. Virt, I. V. Kurilo, I. A. Rudyĭ, F. F. Sizov, N. N. Mikhaĭlov, R. N. Smirnov   +5 more
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Extinction and luminescence coefficients of CdSe/CdTe, CdTe/CdSe, and CdTe/CdS heterostructures based on colloidal CdSe and CdTe nanocrystals

Journal of Optical Technology, 2011
This paper discusses the optical properties of colloidal CdSe/CdTe, CdTe/CdSe, and CdTe/CdS heterostructures synthesized by growing a shell on CdSe and CdTe nanocrystals. The extinction coefficients of the first exciton absorption band and the extinction coefficients at 400 nm are determined as a function of the amount of shell material added during ...
D. N. Dirin, M. S. Sokolikova, A. M. Gaskov, R. B. Vasilev   +3 more
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Shallow donors in CdTe

Physical Review B, 1990
Photoluminescence and high-resolution selective excitation of luminescence have been used to study shallow donors in non-intentionally-doped Te-rich or nearly stoichiometric CdTe crystals and their evolution after controlled thermal annealings (specifically under Cd overpressure). It has been shown that there are at least six native donors. For each of
, Francou, , Saminadayar, , Pautrat
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In Doping in CdTe Film by Co-Evaporation of CdTe and In

Japanese Journal of Applied Physics, 1987
High-dark-conductivity CdTe films have been prepared by co-evaporation of CdTe and In. The conductivity of the films prepared in this study ranged from 10-8 to 103 Scm-1. The film structure was of the zinc-blende type with a preferential orientation of the (111) planes parallel to the substrate. Analyzing the film structure by X-ray analysis, it was
Tatsuro Suzuki, Yoshinori Ema, Toshiya Hayashi   +2 more
openaire   +1 more source

Luminescence properties of CdTe-based solid solutions in the CdTe-Ga2Te3 and CdTe-GaTe systems

Inorganic Materials, 2011
The extent of the cadmium-telluride-based solid solution along the CdTe-GaTe join at 737°C has been determined from the composition dependence of its unit-cell parameter. The cathodoluminescence spectra of CdTe-based solid solutions in the CdTe-GaTe and CdTe-Ga2Te3 systems have been measured.
I. N. Odin, M. V. Chukichev, M. V. Gapanovich, G. F. Novikov   +3 more
openaire   +1 more source

Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces

Physical Review B, 1989
A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states
, Schick, , Bose, , Chen
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Optimization of MBE of CdTe/CdTe: Refinement in Structural Quality Evaluation of MBE Grown (111) CdTe

MRS Proceedings, 1992
ABSTRACTA detailed optimization of MBE growth of CdTe on CdTe (111)β using white beam synchrotron x-ray topography, and x-ray rocking curve analysis has been carried out. Defect structures in (111)5 substrates and epilayers are imaged with white beam topography and, for the first time, direct observation of stress induced microtwin growth in CdTe ...
M. B. Lee, T. Fanning, D. Di Marzio, L. G. Casagrande, M. Dudley   +4 more
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Short period CdTe-ZnTe and CdTe-MnTe superlattices

Materials Science and Engineering: B, 1993
Abstract CdTe-ZnTe superlattices (SLs) with a period ranging from 13 to 38 A have been grown by atomic layer epitaxy (ALE) on (001) GaAs substrates. In a substrate temperature range between 270°C and 290°C the growth rate for both CdTe and ZnTe regulated itself to exactly 0.5 monolayers per reaction cycle, allowing the growth of very precisely ...
W. Faschinger, F. Hauzenberger, P. Juza, H. Sitter, A. Pesek, H. Zajicek, K. Lischka   +6 more
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Laser growth of CdTe epitaxial film on CdTe substrate

Materials Science and Engineering: B, 1993
Abstract The growth of CdTe epitaxial film on a CdTe substrate using a laser deposition method has been investigated: the beam of a pulsed ArF excimer laser is focused on a CdTe target and the plume of ejected material is collected onto a (111) Zndoped CdTe substrate (4%). From the X-ray diffraction measurements and double-diffraction X-ray analysis,
C. Coutal, J.C. Roustan, A. Azema, A. Gilabert, P. Gaucherel, R. Triboulet   +5 more
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Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

AIP Conference Proceedings, 1999
We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films.
W. Song, D. Mao, V. Kaydanov, T. R. Ohno, J. U. Trefny, R. K. Ahrenkiel, D. H. Levi, S. Johnston, B. E. McCandless   +8 more
openaire   +1 more source