Results 131 to 140 of about 691 (175)

Tellurium antisites in CdZnTe

Applied Physics Letters, 2001
The electrical properties of CdTe and Cd1−xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction
Muren Chu, Sevag Terterian, David Ting, C. C. Wang, H. K. Gurgenian, Shoghig Mesropian   +5 more
openaire   +1 more source

?????????????????????????? ?????????????? CdZnTe ?? ???????????????????? ???????????????????? ??-?????????????????? ???? ?????? ????????????

2014
???????????????? ???????????????????????????? ?????????? ???????????????????????? ?????????????? CdZnTe ?????? ?????????????????? ???????????????????????? ?????????????????????????? ?????????? ?????????????? ?? ???????????????????? ??-??????????????????.
  +6 more sources

On the Role of Boron in CdTe and CdZnTe Crystals

Journal of Electronic Materials, 2011
It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium.
Pavesi, Maura 1, 2, Marchini, Laura 1, Zha, Mingzheng 1, Zappettini, Andrea 1, Zanichelli, Massimiliano 1, 2, Manfredi, Manfredo 1   +13 more
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The X-ray response of CdZnTe

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
We report the results of a series of X-ray measurements on a 3.1 mm 2 , 2.5 mm thick CdZnTe detector carried out at the BESSY II and HASYLAB synchrotron radiation facilities. The detector energy response function was found to be linear over the energy range 2.3–100 keV with an average rms non-linearity of 0.6%, consistent with statistics.
Owens, Alan, Bavdaz, M., Andersson, H., Gagliardi, T., Krumrey, M., Nenonen, S., Peacock, A., Taylor, I., Tröger, L.   +8 more
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Performance study of CdZnTe spectrometers

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
Abstract The basic understanding as well as the technology of wide band-gap semiconductors in II–VI group in general; and in CdZnTe in particular, are still at an early stage of investigation and are not established. In this research new models were developed to describe the charge collection in semiconductor spectrometers for X- and γ-rays as well ...
A. Ruzin, Y. Nemirovsky
openaire   +1 more source

?????????????????????? ?????????????????????????? ?????????????????????????????????? ???????????????????? ???? CdTe (CdZnTe) ?????? ?????????????????????????? ?????? ??????????????

2015
?? ?????????????????????????????????? ???????????????????? ???????????????????????? ?????????????????? ?? ???????????????? ???? ???????????????????????? ?????????????????? ???????????????????????? ??????????????????????, ?????????????? ???????????????? ???????????????? ???????????????? ?? ?????????? ?????????????? ???? ???? ??????????. ?? ??????????????
  +6 more sources

?????????????????????????????? ???????????????????????????? ???????????????????? ???????????????????????????? ?? ??????????-?????????????????? ???? ???????????? (CdZnTe)

2015
?????????????????????? ?????????????? ???????????????????????????? ?? ??????????-?????????????????? ???? ?????????????? ???????????????????????????? ???????????????????? ???? CdTe ?? CdZnTe. ?????????????????? CdTe ???????? ???????????????? ???????????????????????? ?????????????? ??????????????????, ?? CdZnTe ??? ?????????????? ?????????????????? ??????
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Recent progress in CdZnTe crystals

Journal of Electronic Materials, 1999
CdZnTe crystals were grown by vertical gradient freezing (VGF) method with a Cd reservoir for controlling the Cd pressure under conditions such that the crystals are in equilibrium with a Cd vapor corresponding to the minimum deviation from stoichiometry. The precipitate size became smaller by a post growth annealing method in the VGF furnace after the
A. Koyama, A. Hichiwa, R. Hirano
openaire   +1 more source

Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates

Journal of Electronic Materials, 1998
With the goal of maximizing the yield of infrared focal plane arrays (IRFPAs), Santa Barbara Research Center’s (SBRC) Infrared Materials Producibility Program (IRMP) has focused on assessing and improving the quality, yield, and throughput of CdZnTe substrates.
S. L. Price, H. L. Hettich, S. Sen, M. C. Currie, D. R. Rhiger, E. O. Mc Lean   +5 more
openaire   +1 more source

?????????????????????? ??????????-?????????????????????? ???? ???????????? CdZnTe-??????????????????

2017
???????????????????? ?????????????? ?????????????? ???????????????????????????????? ??????????-???????????????????????? ???? ???????????? CdZnTe-?????????????????? ??????-01. ???????????????????? ?????????????????????? ?? ?????????????? ???????????????????? ?????????????????? ??????-01. ?????????????? ?????????????????????? ?????????????????????? ?? ???
openaire   +3 more sources