Results 161 to 170 of about 3,090 (211)

Design of Long-Wave Fully Polarized HgCdTe Photodetector Based on Silicon Metasurface. [PDF]

Micromachines (Basel)
Cheng B, Wang X, Zou Y, Song G, Zhai K, Wang X.   +5 more
europepmc   +1 more source

Temperature and electron concentration dependences of 1/<i>f</i> noise in Hg_1-<i>x</i>Cd_<i>x</i>Te - evidence for a mobility fluctuations mechanism.

Nanoscale
Rehman A, Petriakov V, Yahniuk I, Kazakov A, Rogalska I, Grendysa J, Marchewka M, Haras M, Wojtowicz T, Cywiński G, Knap W, Rumyantsev S.   +11 more
europepmc   +1 more source

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Resistance characteristics of CdZnTe films with structure of Cu/CdZnTe/ITO and Cu/CdZnTe/Cu

Applied Physics A: Materials Science and Processing, 2022
Dongmei Zeng
exaly   +2 more sources

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

SPIE Proceedings, 1988
The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer
B Pelliciari, J P. Chamonal, G L. Destefanis, L Dicioccio   +3 more
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Homogeneity of CdZnTe detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
Abstract We describe the current state of nuclear radiation detectors produced from single crystals of Cd1−xZnxTe(CZT), with 0 ...
H Hermon, M Schieber, R.B James, J Lund, A.J Antolak, D.H Morse, N.N.P Kolesnikov, Y.N Ivanov, M.S Goorsky, H Yoon, J Toney, T.E Schlesinger   +11 more
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Characterization of CdZnTe detectors

2021
Cadmium-Zink-Tellurid (CdZnTe) Detektoren bestehen aus Halbleitermaterialien und sind über einen breiten Energiebereich sensitiv auf Röntgen- und Gammastrahlung. Sie kommen in der Hadronen- und Astrophysik zum Einsatz, finden jedoch auch Anwendungsbereiche in der Medizin.
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CdZnTe radiation detectors

Journal of Crystal Growth, 1999
The spectrometer characteristics of the room-temperature CdZnTe detectors, which were manufactured from the crystals grown by VPG, were determined. The energy resolution of the best samples were 6% (FWHM) for E γ = 59.6 keV and 5% (FWHM) for E γ = 662 keV.
exaly   +2 more sources

Tellurium antisites in CdZnTe

Applied Physics Letters, 2001
The electrical properties of CdTe and Cd1−xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction
Muren Chu, Sevag Terterian, David Ting, C. C. Wang, H. K. Gurgenian, Shoghig Mesropian   +5 more
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?????????????????????????? ?????????????? CdZnTe ?? ???????????????????? ???????????????????? ??-?????????????????? ???? ?????? ????????????

2014
???????????????? ???????????????????????????? ?????????? ???????????????????????? ?????????????? CdZnTe ?????? ?????????????????? ???????????????????????? ?????????????????????????? ?????????? ?????????????? ?? ???????????????????? ??-??????????????????.
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The X-ray response of CdZnTe

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
We report the results of a series of X-ray measurements on a 3.1 mm 2 , 2.5 mm thick CdZnTe detector carried out at the BESSY II and HASYLAB synchrotron radiation facilities. The detector energy response function was found to be linear over the energy range 2.3–100 keV with an average rms non-linearity of 0.6%, consistent with statistics.
Owens, Alan, Bavdaz, M., Andersson, H., Gagliardi, T., Krumrey, M., Nenonen, S., Peacock, A., Taylor, I., Tröger, L.   +8 more
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