Results 71 to 80 of about 3,090 (211)

Performance updating of CdZnTe strip-drift detectors

, 2007
Efficiency of strip-drift structure of contacts for improvement of charge collection conditions in CdZnTe detectors was shown some years ago. For such detector with area 10 x 10 mm(2) and thickness 3 mm of crystal, produced by eV products we obtained ...
Budtz-Jørgensen, Carl, Shorohov, M., Loupilov, A., Gostilo, V., Tsirkunova, I., Kuvvetli, Irfan   +5 more
core   +1 more source

Infrared absorption and its sources of CdZnTe at cryogenic temperature

, 2022
To reveal the causes of infrared absorption in the wavelength region between electronic and lattice absorptions, we measured the temperature dependence of the absorption coefficient of p-type low-resistivity (similar to 10(2) Omega cm) CdZnTe crystals ...
Maeshima, Hiroshi, Nakagawa, Takao, Kaneda, Hidehiro, Koga, Ryoichi, Hanamura, Yusuke, Nagase, Koichi, Hirahara, Yasuhiro, Kokusho, Takuma, Oyabu, Shinki, Suzuki, Toyoaki, Matsumoto, Kosei, Ishikawa, Daichi, Wada, Takehiko   +12 more
core   +1 more source

Calculation of transport properties of gamma-radiation detectors based on semi-insulating semiconductors

Технологія та конструювання в електронній апаратурі, 2008
A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors.
A. A. Zakharchenko, I. M. Prokhoretz, V. E. Kutny, A. V. Rybka, M. A. Khazhmuradov   +4 more
doaj  

Instrumentation effects on U and Pu CBNM standards spectra quality measured on a 500 mm3 CdZnTe and a 2×2 inch LaBr3 detectors

EPJ Web of Conferences, 2018
Nowadays, there is interest in developing gamma-ray measuring devices based on the room temperature operated medium resolution detectors such as semiconductor detectors of the CdZnTe type and scintillators of the LaBr3 type.
Meleshenkovskii I., Borella A., Van der Meer K., Bruggeman M., Pauly N., Labeau P.E., Schillebeeckx P.   +6 more
doaj   +1 more source

Numerical simulation of vertical Bridgman solidification of CdZnTe

International Journal for Simulation and Multidisciplinary Design Optimization, 2014
The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigated in the current study. The numerical approach is developed by using COMSOL Multiphysics software, which is based on finite elements method (FEM) with ...
Jamai Hanen, Pateyron Bernard, Sammouda Habib, El Ganaoui M.   +3 more
doaj   +1 more source

Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

, 1989
The structural and electrical properties of heteroepitaxial HgCdTe/CdZnTe/GaAs/Si were evaluated using high-resolution x-ray diffraction techniques and Hall-effect measurements as a function of temperature. Significant tilting of the layers was found for
M. H. Kalisher, W.L. Ahlgren, W. J. Hamilton, S.M. Johnson, J. B. James   +4 more
core   +1 more source

Surface and Subsurface Damages of CdZnTe Substrates Ground by Diamond Grinding Wheel

, 2011
Surface and subsurface damage affect the preparation of high-resolution HgCdTe and CdZnTe detectors. Grinding experiments were performed on CdZnTe substrates with the grinding wheels of different abrasive sizes.
Y. Li, Hang Gao, Ren Ke Kang, Shang Gao
core   +1 more source

Improvement of CdZnTe Crystal by Laser Radiation

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) semiconductor crystals have been shown to be the most promising materials for X-ray and gamma ray detectors due to high stopping power, low dark-current, high µe product, high room temperature
Daukšta, Edvīns, Mičko, Aleksandrs, Diéguez, Ernesto, Crosso, I., Medvids, Artūrs, Bensalah, H.   +5 more
core   +1 more source

The influence of growing in a hydrogen atmosphere on the micromechanical properties of Cd1-xZnxTe single crystals

Фізика і хімія твердого тіла
У статті досліджено вплив водневої атмосфери під час росту кристалів Cd 1–x Zn x Te (CZT) на їхню мікротвердість та стійкість до руйнування. Ми виявили, що мікротвердість кристалів, вирощених у водні, вища порівняно зі зразками, отриманими в інертному ...
Yu. Pavlovskyy, V. Brytan, O. Kuzyk, Yu. Skvarok, Yu. Kovalchuk, A. Tymkiv   +5 more
doaj   +1 more source

Characterisation of pixelated CdZnTe sensors using MAXIPIX

, 2019
International audienceIn order to maximise the absoprtion efficiency of X-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation.
Ponchut, C., Tsigaridas, S., Zanettini, S., Zappettini, A.   +3 more
core   +1 more source