Results 71 to 80 of about 3,741 (207)
Characterization of CdZnTe ambient temperature detectors [PDF]
, 1994 A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides.
Lavietes, A.
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Numerical simulation of vertical Bridgman solidification of CdZnTe
International Journal for Simulation and Multidisciplinary Design Optimization, 2014 The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigated in the current study. The numerical approach is developed by using COMSOL Multiphysics software, which is based on finite elements method (FEM) with ...
Jamai Hanen +3 more
doaj +1 more source
EPJ Web of Conferences, 2018 Nowadays, there is interest in developing gamma-ray measuring devices based on the room temperature operated medium resolution detectors such as semiconductor detectors of the CdZnTe type and scintillators of the LaBr3 type.
Meleshenkovskii I. +6 more
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Improvement of CdZnTe Crystal by Laser Radiation
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) semiconductor crystals have been shown to be the most promising materials for X-ray and gamma ray detectors due to high stopping power, low dark-current, high µe product, high room temperature
Daukšta, Edvīns +5 more
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High-energy X-ray diffraction and topography investigation of CdZnTe [PDF]
, 2005 The crystal quality of CdZnTe (CZT) was investigated by using high-energy transmission x-ray diffraction techniques. CdZnTe had shown excellent performance in hard hard x-ray and gamma detection.
CARINI, Gabriella +8 more
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Simulation of energy dependence of CdTe (CdZnTe) gamma-radiation detectors sensitivity
Технологія та конструювання в електронній апаратурі, 2007 When using detectors based on the semiconductor compounds CdTe (CdZnTe) in dosimetric instruments operating over a wide range of gamma‑radiation energies, it is necessary to correct the dependence of detector sensitivity on energy.
A. A. Zakharchenko +5 more
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Characterization of CdZnTe thin films prepared by magnetron sputtering from a single CdZnTe target
2011 37th IEEE Photovoltaic Specialists Conference, 2011 We utilized a sputtering technique by using a single Cadmium Zinc Tellurium (CdZnTe) target to form alloys of 200 nm Cd 1−x Zn x Te thin films onto heated (200–300–400°C) and unheated glass substrates for all 0 2 ambient. Measurements were performed before and after annealing by XRD, XPS, FTIR spectroscopes.
Yılmaz, Ercan +3 more
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Characterisation of pixelated CdZnTe sensors using MAXIPIX
, 2019 International audienceIn order to maximise the absoprtion efficiency of X-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation.
Ponchut, C. +3 more
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Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation
AIP Advances, 2012 A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals ...
X. C. Zhao +7 more
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Calculation of transport parameters of gamma-radiation detectors based on semi-insulating semiconductors [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 A method of fast determination of the high resistivity detector charge collection parameters with the use of the detector dosimetric characteristics and by means of mathematical simulation is proposed.
Zakharchenko A. A. +4 more
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