Results 181 to 190 of about 5,233,506 (296)

Engineering Local Polar Frustration in Lead‐Free Dielectric Ceramics for Ultrahigh Normalized Energy Storage Performance

open access: yesAdvanced Functional Materials, EarlyView.
Local polar frustration is engineered to stabilize an ergodic relaxer through nanoscale multiphase coexistence, suppressing long‐range ferroelectric order while preserving high polarization. This strategy delivers ultrahigh low‐field normalized energy density (Wa >0.020 mC cm−2), exceptional thermal stability, and a transferable design principle for ...
Hareem Zubairi   +9 more
wiley   +1 more source

Front-Loading Zn<sup>2+</sup> via Lattice-Breathing-Enabled Early-Stage Co-Intercalation for Ultrastable Zn-Ion Batteries. [PDF]

open access: yesAdv Sci (Weinh)
Li H   +15 more
europepmc   +1 more source

Freeze‐Thaw Engineered Dual Conductivity Polymeric Binder Stabilizes Large‐Volume‐Change Lithium–Ion Battery Anodes

open access: yesAdvanced Functional Materials, EarlyView.
This work developed an all‐aqueous freeze‐thaw strategy to create a dual‐conductive PVA/P3KBT binder for high volume‐change lithium–ion battery anodes. The resulting binder system strengthens the electrode structure, supports ion and electron transport, and accommodates repeated volume changes, reducing cracking and improving long‐term cycling ...
Haoze Ren   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim   +3 more
wiley   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj   +4 more
wiley   +1 more source

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

open access: yesAdvanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash   +6 more
wiley   +1 more source

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