Results 121 to 130 of about 8,575 (260)

Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

Advanced Science, EarlyView.
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L. Hector, Ruomeng Huang   +5 more
wiley   +1 more source

Thin‐Film Transistor Based Active Taxel for Multimode Tactile Perception and Fused Processing

Advanced Science, EarlyView.
Skin serves as the largest‐area organ for human and embodied intelligent robots, providing tactile interaction. An active multimode fused (AMF) artificial skin is developed using standard TFT processes, featuring 2T‐1C taxels with optical and electrostatic capacitive receptors for cross‐modal sensing.
Sihao Wu, Zheng Zhou, Aoran Xu, Lutong Wang, Tingchen Yi, Chuanlin Sun, Haotong Zhu, Jiaqi Li, Junchen Dong, Li Zhou, Lifeng Liu, Yimao Cai, Dedong Han, Xing Zhang   +13 more
wiley   +1 more source

Ultra‐Radiostable Covalent Conformationally Interlocked Networks Enabling a Universal Radiometal‐Labeling Platform for Cancer Radioembolization

Advanced Science, EarlyView.
Conjugated poly(imide dioxime)‐based microspheres establish a radiometal coordination‐driven conformational interlocked network with ultra‐high radiostability. This platform enables low‐temperature, multi‐radionuclide labeling for SPECT/PET/MRI imaging and radionuclide therapy. Mechanistic insights from EXAFS and DFT reveal enhanced stability, while in
Xiao Xu, Zhenwen Zhao, Yangjie Wang, Zhigang Liu, Zhijie Liu, Xiaoling Li, Zhichen Mao, Lu Xu, Gan Lin, Gang Liu, Hongjuan Ma   +10 more
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Charging station planning considering the total cost of construction of users and charging stations

IOP Conference Series: Materials Science and Engineering, 2019
Yunxia Dong, Li Li
openaire   +1 more source