Results 161 to 170 of about 3,121,379 (296)

Transient Terahertz Oscillations During Photoinduced Polarization Topology Reconfiguration in Ferroelectric Superlattices

open access: yesAdvanced Science, EarlyView.
Terahertz resonances in crystalline heterostructures could close a spectral gap between conventional electronics and photonics while opening new windows on non‐equilibrium lattice dynamics. Femtosecond optical screening of the depolarization field in epitaxial PbTiO3/SrTiO3 superlattices launches a collective polar mode that oscillates near 1 THz and ...
Deepankar Sri Gyan   +13 more
wiley   +1 more source

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

open access: yesAdvanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian   +7 more
wiley   +1 more source

Illuminating Mitochondrial RNA G‐Quadruplexes as Structural Brakes on RNA Granule Assembly and OXPHOS

open access: yesAdvanced Science, EarlyView.
A new fluorescent probe, MitoQUMA, brings mitochondrial RNA G‐quadruplexes (mtRNA G4s) into view in live cells. This tool reveals that excessive mtRNA G4 formation halts mitochondrial RNA granule (MRG) assembly, opposite to the phase‐separation role of cytoplasmic RNA G4s. A chemical genetic screen further identifies a Wnt/β‐catenin–GRSF1–mtRNA G4 axis
Gui‐Xue Tang   +7 more
wiley   +1 more source

Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors

open access: yesAdvanced Science, EarlyView.
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li   +4 more
wiley   +1 more source

Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film

open access: yesAdvanced Science, EarlyView.
We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun   +10 more
wiley   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

open access: yesAdvanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan   +11 more
wiley   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

open access: yesAdvanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo   +8 more
wiley   +1 more source

Surface‐Interaction‐Driven Polarity Switching in II–V Cd3P2 Colloidal Quantum Dots for Infrared Photodiodes

open access: yesAdvanced Science, EarlyView.
. ABSTRACT Colloidal quantum dots (CQDs) based on II–V semiconductors offer attractive optical absorption and carrier transport properties for infrared optoelectronics, yet their device‐relevant electronic behavior remains poorly understood. In particular, Cd3P2 CQDs have been constrained by limited control over nanocrystal growth and carrier polarity.
Ha‐Chi V. Tran   +10 more
wiley   +1 more source

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