Results 221 to 230 of about 175,912 (280)

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

open access: yesAdvanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush   +9 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

open access: yesAdvanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin   +10 more
wiley   +1 more source

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

open access: yesAdvanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil   +5 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

Enhancement of the Photoelectric Performance of (6,5) Carbon Nanotubes via Construction of Type‐I Heterojunctions with Rhodamine B

open access: yesAdvanced Electronic Materials, EarlyView.
Single‐chirality (6,5) carbon nanotube (CNT) films, when integrated with RhB molecules to form Type I heterogeneous films, exhibit a more than twofold increase in photoluminescence efficiency and approximately one‐order‐of‐magnitude enhancement in photoelectric conversion efficiency compared to pristine (6,5) CNT films.
Shilong Li   +5 more
wiley   +1 more source

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