Results 51 to 60 of about 177,174 (294)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Integration of Stationary Batteries for Fast Charge EV Charging Stations [PDF]

Energies, 2019
One of the biggest issues preventing the spread of electric vehicles is the difficulty in supporting distributed fast charging stations by actual distribution grids. Indeed, a significant amount of power is required for fast charging, especially if multiple vehicles must be supplied simultaneously.
de Simone D., Piegari L.
openaire   +2 more sources

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

A Novel Assessment Method of Charging Station Planning Based on Fuzzy Matter Element Theory

MATEC Web of Conferences, 2017
Scientific and rational planning of urban electric vehicles (EVs) charging station is an important prerequisite for large scale EVs interact with smart grid friendly.
Zhao Junyi, Yang Chaoying, Xue Zhiwei, Tan Yangyang   +3 more
doaj   +1 more source

Combined Optimal Planning and Operation of a Fast EV-Charging Station Integrated with Solar PV and ESS

Energies, 2021
Sufficient and convenient fast-charging facilities are crucial for the effective integration of electric vehicles. To construct enough fast electric vehicle-charging stations, station owners need to earn a reasonable profit.
Leon Fidele Nishimwe H., Sung-Guk Yoon
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

An Electric Taxi Charging Station Planning Scheme Based on an Improved Destination Choice Method

Energies, 2019
The environmental crisis has prompted the development of electric vehicles as a green and environmentally friendly mode of travel. Since a reasonable layout of electric vehicle (EV) charging stations is the prerequisite for developing the EV industry ...
Ruifeng Shi, Jiahua Liu, Zhenhong Liao, Li Niu, Eke Ibrahim, Fang Fu   +5 more
doaj   +1 more source

Curvature‐Tuned Friction at Electrified Ionic Liquid Interfaces

Advanced Functional Materials, EarlyView.
Graphene curvature plays a key role in friction electrotunability at single‐asperity contacts lubricated by ionic liquids. A 9 nm radius yields stronger tunability than larger radii, with distinct friction coefficients at low and high loads indicating a shift in the slippage plane.
Wei Song, Md Ashiqur Rahman, Qianlu Zheng, Nathaniel Hawthorne, James D. Batteas, Rui Qiao, Rosa M. Espinosa‐Marzal   +6 more
wiley   +1 more source