Results 151 to 160 of about 1,603 (258)

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

High-energy decays and weak quantum measurements. [PDF]

Eur Phys J C Part Fields
Barr AJ.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Prof. Siying Peng: caterpillars to butterflies, chasing light in photonics. [PDF]

Light Sci Appl
Wang J.
europepmc   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Charm Physics at LHCb [PDF]

Proceedings of 12th International Conference on B-Physics at Hadron Machines — PoS(BEAUTY 2009), 2010
openaire   +1 more source

Predictions for neutrinos and new physics from forward heavy hadron production at the LHC. [PDF]

Eur Phys J C Part Fields
Buonocore L, Kling F, Rottoli L, Sominka J.   +3 more
europepmc   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

Advanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar, Atul Thakre, R. Thamankar   +2 more
wiley   +1 more source

Quantum information meets high-energy physics: input to the update of the European strategy for particle physics. [PDF]

Eur Phys J Plus
Afik Y, Fabbri F, Low M, Marzola L, Aguilar-Saavedra JA, Altakach MM, Asbah NA, Bai Y, Banks H, Barr AJ, Bernal A, Browder TE, Caban P, Casas JA, Cheng K, Déliot F, Demina R, Di Domenico A, Eckstein M, Fabbrichesi M, Fuks B, Gabrielli E, Gonçalves D, Grabarczyk R, Grossi M, Han T, Hobbs TJ, Horodecki P, Howarth J, Hsu SC, Jiggins S, Jones E, Jung AW, Knue AH, Korn S, Lagouri T, Lamba P, Landi GT, Li H, Li Q, Low I, Maltoni F, McFayden J, McGinnis N, Morales RA, Moreno JM, de Nova JRM, Negro G, Pagani D, Pelliccioli G, Pinamonti M, Pintucci L, Ravina B, Ruzi A, Sakurai K, Simpson E, Sioli M, Su S, Trifinopoulos S, Vahsen SE, Vallecorsa S, Vicini A, Vos M, Vryonidou E, White CD, White MJ, Wildridge AJ, Wu TA, Zani L, Zhang Y, Zoch K.   +70 more
europepmc   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source