Results 221 to 230 of about 13,159 (295)
Effect of Biomass Torrefaction on the Syngas Quality Produced by Chemical Looping Gasification at 20 kWth Scale. [PDF]
Condori O +7 more
europepmc +1 more source
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
Packed-Bed Chemical Looping Reforming for Renewable Syngas Production from Glycerol with Ni_Fe-Based Oxygen Carriers/Catalysts. [PDF]
Navarro C +4 more
europepmc +1 more source
Grain boundary triple junctions are an essential ingredient of the microstructure of polycrystalline materials. In this study, a triple junction is observed using atomic‐resolution scanning transmission electron microscopy and characterized. Computer simulations reveal that the junction has a dislocation character that is determined by the joining ...
Tobias Brink +4 more
wiley +1 more source
Oxygen Species Involved in Complete Oxidation of CH4 by SrFeO3-δ in Chemical Looping Reforming of Methane. [PDF]
Hao J, Yang L, Zhang J.
europepmc +1 more source
X‐ray computed tomography reveals how process‐induced defects evolve from green to sintered states in Fused Filament Fabrication (FFF)‐manufactured 17‐4PH stainless steel. Internal porosity, weakest cross‐sections, and fracture locations show strong correlation with tensile performance, demonstrating the potential of computed tomography (CT)‐based ...
György Ledniczky +3 more
wiley +1 more source
Correction: Effect of support on hydrogen generation over iron oxides in the chemical looping process. [PDF]
Gao Z, Fu F, Niu L, Jin M, Wang X.
europepmc +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source

