Results 161 to 170 of about 79,935 (314)
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou +8 more
wiley +1 more source
Data-driven queueing modelling: a simulation case study of emergency department crowding. [PDF]
Wartelle A +4 more
europepmc +1 more source
Design,simulation and fabrication of improved wideband microstrip balun circuit at 5 Ghz
Ji-zhen Tang
openalex +1 more source
Joint Control of Radiated and Surface Waves via Space‐Time Coding Metasurfaces
A unified space‐time coding metasurface platform enables simultaneous control of radiated and surface‐confined waves across multiple harmonics. Demonstrated functionalities include multi‐frequency beam shaping; surface‐wave excitation, and hybrid multiplexing.
Zihao Dai +6 more
wiley +1 more source
Topology Design of Reconfigurable Intelligent Metasurfaces Based on Equivalent Circuit Model. [PDF]
Xu J, Zhu C, Pan Y, Zhang H, Wu C, Li H.
europepmc +1 more source
The NiCuFe‐layered double hydroxides nanosheets are synthesized for facilitating nitrate‐to‐ammonia with a high ammonia yield of 1.64 mmol h−1 cm−2, Faradaic efficiency of 94.8% and stability for 15 cycles. The assembled Zn‐nitrate battery delivers a remarkable power density of 12.4 mW cm−2.
Bin Liu +9 more
wiley +1 more source
Simulations, measurements and equivalent circuit for a CPW-CPW vertical interconnection
J. Rudnicki +2 more
openalex +2 more sources
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley +1 more source
Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor. [PDF]
Liu Y +5 more
europepmc +1 more source

