Results 41 to 50 of about 3,458,738 (222)

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

open access: yes, 2004
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M.   +4 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

open access: yesAdvanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee   +10 more
wiley   +1 more source

Development of circuit simulation examples for education of electronics

open access: yes, 2022
The content of this will work will benefit two groups of people: new students of electronics and beginners to PSpice for TI. The new students will benefit from learning to build circuits on the simulator and to choose and interpret simulations and their ...
da Rocha Almeida, Joao Anastacio
core  

High-speed simulation of PCB emission and immunity with frequency-domain IC/LSI source models [PDF]

open access: yes, 2003
Some recent results from research conducted in the EMC group at Okayama University are reviewed. A scheme for power-bus modeling with an analytical method is introduced.
Wang, Zhi Liang   +8 more
core   +1 more source

Strong Lead‐Free Bioinspired Piezoceramics for Durable Energy Transducers

open access: yesAdvanced Functional Materials, EarlyView.
We fabricated brick‐and‐mortar lead‐free piezoceramics with Bi0.5Na0.5TiO3 monocrystal platelets as bricks and amorphous silica as mortar. The alignment of the bricks and the presence of the amorphous silica led to anisotropic residual stresses. These residual stresses increase the samples toughness, strength and durability while the brick alignment ...
Ruxue Yang   +12 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

open access: yesAdvanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig   +3 more
wiley   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

open access: yesAdvanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko   +7 more
wiley   +1 more source

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