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A sub-1G CMOS-MEMS accelerometer

2015 IEEE SENSORS, 2015
We report experimental evaluation results of a CMOS (complementary-metal-oxide semiconductor)-MEMS (microelectromechanical systems) accelerometer for sensing sub-1G (1G = 9.8 m/s2) acceleration. The sub-1G MEMS sensor has been successfully implemented on a 180-nm CMOS LSI (large scale integrated circuits) for the first time.
Daisuke Yamane   +8 more
openaire   +1 more source

Monolithic z-axis CMOS MEMS accelerometer

Microelectronic Engineering, 2014
Display Omitted We propose a monolithic z-axis CMOS MEMS accelerometer with low power consumption.The sensor is integrated with circuits in a wafer-level 0.18-µm CMOS MEMS process.The bending displacements in the microstructures can be controlled well.The use of CMOS-compatible MEMS process can reduce the cost of chip fabrication.
Sheng-Hsiang Tseng   +3 more
openaire   +1 more source

CMOS-MEMS resonant mixer-filters

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2006
RF mixer-filters made by micromachining composite metal and dielectric interconnect layers within foundry CMOS are a potential component in on-chip receivers. Through the electrostatic voltage-squared nonlinearity, mixer-filters down-convert to an intermodulation frequency set by the mechanical resonance enabling higher gain than resonant filters ...
openaire   +1 more source

A CMOS-MEMS Inertial Measurement Unit

2010 IEEE Sensors, 2010
This paper introduces the first monolithic integration of a 3-axis accelerometer, a 2-axis magnetometer and a fullcustom front-end electronics. This complete Inertial Measurement Unit (IMU) has been designed on a single die of 7.5mm² in a 0.35μm CMOS technology.
Alandry, Boris   +3 more
openaire   +2 more sources

Implementation of accelerometer in CMOS-MEMS

2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, 2010
A fully-differential capacitive accelerometer is designed and implemented using TSMC 0.35μm 2P4M CMOS-MEMS process. The measured sensitivity is 53 mV/g.
Tsung-Chi Kuo   +2 more
openaire   +1 more source

Versatile CMOS-MEMS integrated piezoelectric platform

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015
We present the extension of the InvenSense fabrication platform to piezoelectric transduction. The newly proposed CMOS-MEMS Integrated Piezoelectric Platform inherits the wafer bonding advantages of its predecessor, leverages existing semiconductor infrastructure, and is applicable to a wide range of applications.
J.M. Tsai   +10 more
openaire   +1 more source

CMOS MEMS capacitive absolute pressure sensor

Journal of Micromechanics and Microengineering, 2013
This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18??m CMOS (complementary metal?oxide?semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO2?membrane, which acts as a movable electrode ...
M Narducci, L Yu-Chia, W Fang, J Tsai
openaire   +1 more source

Three-axis accelerometer in CMOS MEMS

2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009
A three-axis accelerometer is designed and implemented using TSMC 0.18µm 1P6M CMOS MEMS process. A low-power low-noise chopper-stabilized amplifier is also designed to reduce the flicker noise.
null Tsung-Chi Kuo, null Jean-Fu Kiang
openaire   +1 more source

Mixing in a 220MHz CMOS-MEMS

2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007
This paper describes the frequency mixing operation of a micro electro mechanical system device designed and fabricated in a CMOS commercial technology (AMS 0.35mum). The theory of the MEMS is summarized and a CMOS fully integrated MEMS is characterized as a mixer.
J.L. Lopez   +8 more
openaire   +1 more source

Implementation of CMOS-MEMS Compound Lens

2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, 2007
This study demonstrates the possibility of implementing lens system via CMOS process. The ever first CMOS based optical focusing system successfully demonstrated focusing capability, with 5um by 6um focus spot size at 6 Hum, and capable of moving focal point 12um in axial direction.
Chuanwei Wang   +4 more
openaire   +1 more source

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