Results 321 to 330 of about 627,439 (398)

Defect Density of States of Tin Oxide and Copper Oxide p‐type Thin‐film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
The complete band‐to‐band defect density of states driving p‐mode operation in tin and copper oxide transistors is obtained through photoconduction microscopy over a 0.15 to 3.5 eV tunable laser range. These analytical maps of subgap defect density with the extracted TFT bandgaps, show how ideal p‐mode operation may be achieved in metal oxide thin‐film
Måns J. Mattsson   +6 more
wiley   +1 more source

Materials Selection Principles for Designing Electro‐Thermal Neurons

open access: yesAdvanced Electronic Materials, EarlyView.
Materials property – performance relations are established for new and old electrical materials leveraged as electro‐thermal oscillators emulating neuron dynamics. Robust, reconfigurable, high frequency, low power characteristics are explicitly tied to highly nonlinear electrical transport, small specific heat, and greater electrical than thermal ...
Fatme Jardali   +6 more
wiley   +1 more source

Advances of Carbon Nanotube Based Flexible Amplifiers for Skin‐Mounted Physiological Signal Monitoring

open access: yesAdvanced Electronic Materials, EarlyView.
Flexible carbon nanotube thin‐film transistors (CNT TFTs) amplifiers are reviewed. It covers fabrication strategies on flexible substrate, including the selection of flexible substrate, device innovation, realization of complementary metal‐oxide‐semiconductor (CMOS) technology.
Haitao Zhang   +3 more
wiley   +1 more source

Intraoral digital radiography: A comprehensive report on the technical specifications of current and historical systems. [PDF]

open access: yesImaging Sci Dent
Sampaio-Oliveira M   +7 more
europepmc   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

open access: yesAdvanced Electronic Materials, EarlyView.
A 3‐terminal SOT‐MRAM device that integrates the topological insulator and the perpendicular magnetic tunnel junction. The double magnetic layers with different saturation magnetizations are employed as the recording layer of TIs‐pMTJ. By breaking the chiral symmetry of these states via the interlayer DMI, the field‐free deterministic SOT switching is ...
Xu Zhang   +18 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim   +8 more
wiley   +1 more source

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