Results 211 to 220 of about 49,365 (285)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Multi‐Functional Adaptive Interfaces for Next‐Generation Wearable and Implantable Bioelectronics

Advanced Science, EarlyView.
Adaptive Biointerfaces: A comprehensive overview of next‐generation bioelectronics is presented, highlighting mechano‐adaptive and biophysiologically adaptive interfaces that enable stable, long‐term integration with living tissues. As illustrated in the image, adaptive interface strategies, including mechano‐adaptivity (e.g., injectability, shape ...
Jinhong Park, Junyoung Ha, Do Gyun Kim, Soo‐Hong Lee, Hyun‐Do Jung, Ja Hoon Koo, Gi Doo Cha, Dong Chan Kim   +7 more
wiley   +1 more source

Design and Implementation of a Low-Noise Analog Front-End Circuit for MEMS Capacitive Accelerometers. [PDF]

Micromachines (Basel)
Gong K, Li J, Wang X, Cao H, Xie H.
europepmc   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Engineered Interfacial Control for Suppression of Phase Instability: Operando Visualization from Device to Module Scale

Advanced Science, EarlyView.
Operando real‐time current density–voltage absorption spectroscopy visualizes spatial phase evolution in mixed‐halide perovskites from device to module scale. Phase instability preferentially initiates in regions with insufficient carrier extraction, revealing electrical boundary conditions as governing factors.
Hangyeol Choi, Soo Woong Jeon, Wookyung Jeon, You‐Hyun Seo, Gill Sang Han, Myunghun Shin, Ji‐Sang Park, Jun Hong Noh, Yohan Yoon   +8 more
wiley   +1 more source

A 5000 Fps, 4 Megapixel, Radiation-Tolerant, Wafer-Scale CMOS Image Sensor for the Direct Detection of Electrons and Photons. [PDF]

Sensors (Basel)
Scott A, Bauzà C, Bofill-Petit A, Font A, Gargallo M, Gifreu R, Latif K, Mollà Garcia A, Sannino M, Turchetta R.   +9 more
europepmc   +1 more source

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors. [PDF]

Sensors (Basel), 2016
Kawahito S, Seo MW.
europepmc   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

High-Temperature Annealing of Random Telegraph Noise in a Stacked CMOS Image Sensor After Hot-Carrier Stress. [PDF]

Sensors (Basel)
Chao CY, Wu TM, Liu CC, Yeh SF, Lee CL, Tu H, Wu ZD, Huang JC, Chang CH.   +8 more
europepmc   +1 more source

Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

Advanced Science, EarlyView.
This work demonstrates strain engineering in Ge/Si core–shell nanowires (CS NWs) by tuning the Ge core‐Si shell dimensions. Polarization‐resolved µ‐Raman and geometrical phase analysis quantify the resulting strain. Electronic transport measurements demonstrate record hole mobilities up to 25 400 cm2/Vs, highlighting these Ge/Si CS NWs as a promising ...
Aswathi K. Sivan, Nicolas Forrer, Aakash Shandilya, Yang Liu, Janica Böhler, Alexander Vogel, Arianna Nigro, Pierre Chevalier Kwon, Artemii Efimov, Ilya Golokolenov, Gerard Gadea, Riccardo Rurali, Andreas Baumgartner, Dominik M. Zumbühl, Ilaria Zardo   +14 more
wiley   +1 more source