Results 91 to 100 of about 72,784 (298)

POM‐Based Water Splitting Catalyst Under Acid Conditions Driven by Its Assembly on Carbon Nanotubes

open access: yesAdvanced Materials, EarlyView.
A newly‐engineered POM‐based electrocatalyst incorporating non‐innocent counter cations exhibits fast kinetics for either the OER or HER under strongly acidic conditions (1 m H2SO4), depending on whether it is assembled on carbon nanotubes (1@CNT) or physically mixed with them (1/CNT). In water‐splitting tests using a two‐electrode setup, these systems
Eugenia P. Quirós‐Díez   +8 more
wiley   +1 more source

Polyimide‐Linked Hexaazatriphenylene‐Based Porous Organic Polymer with Multiple Redox‐Active Sites as a High‐Capacity Organic Cathode for Lithium‐Ion Batteries

open access: yesAdvanced Materials, EarlyView.
A high‐capacity polyimide‐linked porous organic polymer (HAT‐PTO) incorporating numerous redox‐active centers is synthesized via a hydrothermal reaction, delivering a high theoretical capacity of 484 mAh g−1. In situ hybridization with carboxyl‐functionalized multiwalled carbon nanotubes enhances conductivity and stability, achieving 397 mAh g−1 at C ...
Arindam Mal   +7 more
wiley   +1 more source

A symmetric 8T2R NVSRAM with autosave function

open access: yesElectronics Letters
This letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures an ...
Bowen Su   +3 more
doaj   +1 more source

Design of Low-Power CMOS OTA Using Bulk-Drive Technique [PDF]

open access: yesJournal of Intelligent Procedures in Electrical Technology, 2015
This paper presents the design of low power CMOS- OTA (operational transconductance amplifier) using bulk drive (BD) technique with broad band. This technique is used for design of low power circuits with broad band for high frequency users, for example ...
Maryam Ghadiri Modarres
doaj  

Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing

open access: yesAdvanced Materials, EarlyView.
This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son   +12 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

open access: yesAdvanced Materials, EarlyView.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang   +4 more
wiley   +1 more source

A Survey of Memristive Threshold Logic Circuits

open access: yes, 2016
In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain.
James, Alex Pappachen   +2 more
core   +1 more source

High‐Performance Air‐Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics

open access: yesAdvanced Materials, EarlyView.
A fibrillar polymer monolayer with a self‐confinement effect is demonstrated, in which aligned chains parallel the nanofiber axis. Employing a top‐gate CYTOP dielectric, this monolayer transistor achieves high mobility (7.12 cm2 V−1 s−1) and exceptional stability over 1260 days in air.
Miao Cheng   +13 more
wiley   +1 more source

End-of-fabrication CMOS process monitor [PDF]

open access: yes
A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented.
Allen, R. A.   +6 more
core   +1 more source

A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS [PDF]

open access: yes, 2005
A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small ...
Hajimiri, Ali   +2 more
core  

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