Results 91 to 100 of about 74,167 (345)

Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors [PDF]

, 2012
The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime.
Khateb, F., Khatib, N., Kubanek, D.
core   +1 more source

Increased Endurance of Nonvolatile Photonics Enabled by Nanostructured Phase‐Change Materials

Advanced Materials, EarlyView.
Tapered and segmented islands of the phase‐change material (PCM) antimony selenide (Sb2Se3) integrated on silicon microring resonators enable ultra‐low‐loss, high‐endurance, non‐volatile photonic tuning. The nanostructured PCM design suppresses interfacial scattering and thermal stress, achieving record endurance over 100 million electrical switching ...
Jayita Dutta, Andrew Tang, Brian Mills, Rui Chen, Arnab Manna, Gokul Nath SJ, Virat Tara, Dennis Callahan, Cosmin Constantin Popescu, Juejun Hu, Arka Majumdar   +10 more
wiley   +1 more source

Sensing circuits for multiwire proportional chambers [PDF]

Integrated sensing circuits were designed, fabricated, and packaged for use in determining the direction and fluence of ionizing radiation passing through a multiwire proportional chamber.
Peterson, H. T., Worley, E. R.
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

Sensors, 2016
This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes.
Brian Aull
doaj   +1 more source

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology [PDF]

, 2014
The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement ...
Groinig, M., Sturm, J., Xiang, X.
core   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

ARIA: Additive ReRAM-Based Integrity and Aging Monitoring for ICs

IEEE Access
This paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based test structures.
Thomas Schultz, Rashmi Jha, Brian Dupaix, Matt Casto   +3 more
doaj   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source