Indictor Library for RF Integrated Circuits in Standard Digital 0.18 μm CMOS Technology
Wee-Shin Jung +4 more
openalex +2 more sources
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Design and Implementation of a Low-Noise Analog Front-End Circuit for MEMS Capacitive Accelerometers. [PDF]
Gong K, Li J, Wang X, Cao H, Xie H.
europepmc +1 more source
Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang +8 more
wiley +1 more source
Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics. [PDF]
Ren S +8 more
europepmc +1 more source
Reform Research and Practice on Analog CMOS Integrated Circuits Design Course Based on OBE Mode
Zekun Zhou, Ping Luo
openalex +1 more source
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Gate insulator stack engineering for fully CMOS-compatible reservoir computing. [PDF]
Hwang J, Park MK, Kim J, Bae JH, Lee JH.
europepmc +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Advancing non-faradaic impedance biosensors: sensitivity enhancement strategies using microfluidics, multiscale labeling, and CMOS technology. [PDF]
Kim NS, Kim J.
europepmc +1 more source

