Results 191 to 200 of about 71,665 (296)

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Harnessing Phase Dynamics Across Diverse Frequencies with Multifrequency Oscillatory Neural Networks

Advanced Intelligent Discovery, EarlyView.
Oscillatory Neural Networks (ONNs) are an emerging computing paradigm that encodes information in the phases of coupled oscillators. Traditionally, ONNs have been investigated using homogeneous frequency oscillators. However, physical hardware implementations are inherently subject to frequency mismatches, device variability, and nonuniformities.
Nil Dinç, Filip Sabo, Aida Todri‐Sanial   +2 more
wiley   +1 more source

Programmable digital printing of organic single crystals for integrated electronics. [PDF]

Sci Adv
Li C, Yang H, Huang C, Hao L, Fan A, Geng B, He L, Zhang F, Duan S, Ren X, Hu W.   +10 more
europepmc   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Advances of Emerging Memristors for In-Memory Computing Applications. [PDF]

Research (Wash D C)
Chen Q, Lu L, Meng J, Xu M, Wang T.
europepmc   +1 more source

Dual‐Mode Oscillations in SiOx‐Based Threshold Switching Devices for Unconventional Probabilistic Computing

Advanced Intelligent Discovery, EarlyView.
To enable versatile unconventional computing, a single SiOx threshold switching device is engineered to exhibit controllable dual‐mode oscillation. By modulating the input voltage, the device selectively provides stable full oscillation for oscillatory neural networks and stochastic probabilistic oscillation for probabilistic bits and true random ...
Hyeonsik Choi, Jihyun Kim, Yonghun Kim, Jiyong Woo   +3 more
wiley   +1 more source

A 0.5-V MI-OTA-based shadow universal filter with integrated passband gain compensation and low-pass control for low-frequency applications. [PDF]

Sci Rep
Kumngern M, Khateb F, Kulej T, Arbet D.
europepmc   +1 more source

Device‐Level Implementation of Reservoir Computing With Memristors

Advanced Intelligent Systems, EarlyView.
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley   +1 more source

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +1 more source