Results 191 to 200 of about 17,755 (307)

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

An integrated CMOS micro search‑coil magnetometer with on‑chip calibration and a low‑noise amplifier. [PDF]

Microsyst Nanoeng
Tavakkoli H, Ahmed M, Shah I, Fang S, Chen W, Bermak A, Lee YK.   +6 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

A K-Band Four-Channel Beamformer with Temperature Compensation Based on 65 nm CMOS Process. [PDF]

Micromachines (Basel)
Wang C, Liu Y, Liao X, Zhang F, Deng C, Liu Y, Sun W, Guan H, Zhou D.   +8 more
europepmc   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Privacy-preserving data analysis using a memristor chip with colocated authentication and processing. [PDF]

Sci Adv
Liu Z, Wang Z, Ding C, Lin B, Tang J, Gao B, Wong N, Wu H.   +7 more
europepmc   +1 more source

Material Strategies for Stimulation and Recording in Neural Biocomputing Platforms

Advanced Electronic Materials, EarlyView.
Material strategies enabling stimulation and recording are central to neural biocomputing systems. This review examines how electronic materials govern the encoding of inputs and decoding of outputs in living neural networks. Advances in electrical, optical, and multimodal interfaces highlight emerging design principles for biocomputing platforms ...
Sehong Kang, Junggeon Park, Aryaman Joshi, Rakid Haque, Gyu Weon Hwang, Hyunjoon Kong   +5 more
wiley   +1 more source

Development of a readout circuit and platform for uric acid measurement for urolithiasis application. [PDF]

Front Bioeng Biotechnol
Caya MV, Chung WY, Liang HC, Chung RL, Liu YW, Ramezani RF, Tsai VFS.   +6 more
europepmc   +1 more source

Orientation‐Engineered PtTe2 Schottky FETs: Quantum Transport Insights for Dopant‐Free Advanced Technology Nodes

Advanced Electronic Materials, EarlyView.
Monolayer PtTe2 enables dopant‐free Schottky FETs through its thickness‐dependent electronic transition. Quantum transport simulations show that crystallographic orientation strongly influences device performance, with Γ–M transport delivering higher drive current, lower leakage, and improved switching behavior.
Lida Ansari, Paul K. Hurley, Farzan Gity
wiley   +1 more source

Design of electronically tunable fractional-order elements based on distributed MOS transistor structures. [PDF]

Sci Rep
Kubanek D, Shadrin A, Dvorak J, Jerabek J, Seda P, Sotner R, Kledrowetz V, Christie C, Freeborn TJ, Ushakov PA.   +9 more
europepmc   +1 more source