Results 161 to 170 of about 3,033 (258)

Oxide interface-based polymorphic electronic devices for neuromorphic computing. [PDF]

open access: yesNat Commun
Pradhan S   +11 more
europepmc   +1 more source

Beyond the Hospital Residential Aged Care Home Referral: A Critical Realist Exploration of Residential Aged Care Admission Practices Directly From Hospital

open access: yesAustralasian Journal on Ageing, Volume 45, Issue 3, September 2026.
ABSTRACT Objective This study explored the complex decision‐making processes underpinning hospital‐to‐permanent Residential Aged Care Home (RACH) transitions from the perspective of RACH managers. Methods Using a critical realist methodology, semi‐structured interviews were conducted with 15 RACH managers on the Gold Coast, Queensland, Australia.
Angel Carrasco   +4 more
wiley   +1 more source

Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application. [PDF]

open access: yesMicromachines (Basel)
Han S   +10 more
europepmc   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

open access: yesAdvanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol   +5 more
wiley   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

open access: yesphysica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh   +7 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, Volume 36, Issue 66, 17 August 2026.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler. [PDF]

open access: yesMicrosyst Nanoeng
Kwak B   +12 more
europepmc   +1 more source

Optoelectronic Nanofluidic Neural Networks for Ionic Computing

open access: yesAdvanced Materials, Volume 38, Issue 47, 21 August 2026.
An ion‐based optoelectronic nanofluidic memristor enables neuromorphic computing in aqueous environments. With tunable ionic memory and multimodal synaptic plasticity, it realizes densely connected ionic neural networks capable of image classification, motion prediction, logic computation, and real‐time in‐sensor computing, advancing fully connected ...
Yaxin Huang   +10 more
wiley   +1 more source

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