Results 251 to 260 of about 76,358 (302)
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IEEE Circuits and Devices: the Magazine of Electronic and Photonic Systems, 2005
In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A El Gamal
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In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A El Gamal
exaly +3 more sources
2017 New Generation of CAS (NGCAS), 2017
In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
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In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
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Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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A CMOS Temperature Sensor Circuit
IEICE Transactions on Electronics, 2007A supply voltage (V DD ) independent temperature sensor circuit, which can be realized by the optimum combination of three current modes of n-MOSFETs including the subthreshold current using the feedback scheme from the temperature dependent voltage (V TD ) output to the gates of three n-MOSFETs, was proposed and fabricated by a standard 1.2μm n-well ...
Takashi Ohzone +5 more
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On the modelling of a CMOS magnetic sensor
1994 IEEE International Symposium on Circuits and Systems (ISCAS), 1994Magnetic sensors are useful in applications such as magnetic read heads and non-contact current sensors. Ideally, a magnetic sensor should be easily integrated with its peripheral circuits. Experimental results indicate that it is possible to convert a conventional MOS transistor into a magnetic sensor by splitting the drain of the device into two ...
Jack Lau, Ping K. Ko, Philip C. Chan
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Lab-on-CMOS: Integrating microfluidics and electrochemical sensor on CMOS
2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2011This paper introduces an integration process capable of merging an electrochemical CMOS chip with a microfluidic structure to bring the performance benefits of on-CMOS sensors to lab-on-chip platforms. This new approach embeds a CMOS die into a carrier chip and provides a planar surface that supports complex microfluidic channels beyond the dimensions ...
Yue Huang, Andrew J. Mason
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CMOS differential and absolute thermal sensors
Proceedings Seventh International On-Line Testing Workshop, 2002This paper treats the test of CMOS digital ICs by using the thermal mapping of the silicon surface as a test observable. Two different temperature-sensing strategies are presented. The novel sensors developed are an on-chip CMOS Differential Temperature (DT) sensor and a Proportional to Absolute Temperature (PTAT) sensor. The sensors are small, robust,
Ashish Syal +3 more
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SPIE Proceedings, 2009
A new breed of CMOS color sensor called MonoColor sensor is developed for a barcode reading application in AIDC industry. The RGBW color filter array (CFA) in a MonoColor sensor is arranged in a 8 x 8 pixels CFA with only 4 pixels of them are color (RGB) pixels and the rest of 60 pixels are transparent or monochrome.
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A new breed of CMOS color sensor called MonoColor sensor is developed for a barcode reading application in AIDC industry. The RGBW color filter array (CFA) in a MonoColor sensor is arranged in a 8 x 8 pixels CFA with only 4 pixels of them are color (RGB) pixels and the rest of 60 pixels are transparent or monochrome.
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Sensors and Actuators A: Physical, 1993
Abstract Sensor design and fabrication using industrial IC technologies has the advantages of batch fabrication and on-chip interface circuitry. Sensors made by CMOS or bipolar IC technology have been demonstrated for magnetic, temperature and radiation measurands.
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Abstract Sensor design and fabrication using industrial IC technologies has the advantages of batch fabrication and on-chip interface circuitry. Sensors made by CMOS or bipolar IC technology have been demonstrated for magnetic, temperature and radiation measurands.
openaire +1 more source