Results 111 to 120 of about 32,265 (253)

Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films

open access: yesAdvanced Electronic Materials, EarlyView.
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu   +6 more
wiley   +1 more source

Ultrathin, Fully Solution‐Processed P(VDF‐TrFE) Piezoelectric Sensor Matrix for Electronic Skin

open access: yesAdvanced Electronic Materials, EarlyView.
An ultrathin, fully solution‐processed 4×$\times$4 piezoelectric sensor array is developed for skinconformal electronicskin applications. The device integrates inkjetprinted polymer electrodes with a 226 nm P(VDFTrFE) active layer on a 4.53 μm$\umu{\rm m}$ Parylene C substrate, enabling extreme flexibility and robust tactile sensing. The array exhibits
Ninja Kajas   +4 more
wiley   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee   +7 more
wiley   +1 more source

Enhanced Spin‐Reorientation Transition and Polarization in DyFeO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Epitaxial strain in antiferromagnetic orthoferrite thin films enhances known bulk properties into a parameter range that makes them more accessible for potential applications. We show that bulk polar properties move from 4 K towards room temperature and the magnetic field‐induced AFM to FM spin‐flip in the paramagnetic Dy lattice when applying small ...
Banani Biswas   +7 more
wiley   +1 more source

Stabilization of Ultrafast Domain Wall Motion by Edge‐Anisotropy Engineering in Ferrimagnetic Nanowires

open access: yesAdvanced Electronic Materials, EarlyView.
Localized laser annealing transforms distorted, edge‐pinned domain‐wall motion in ferrimagnetic Pt/GdFe nanowires into straight, stable, and ultrafast propagation. Experiments and micromagnetic simulations reveal an optimum anisotropy‐engineering window in which moderate edge softening suppresses pinning, whereas excessive anisotropy reduction or ...
Mojtaba Mohammadi   +5 more
wiley   +1 more source

What Really Drives Agri‐Environment‐Climate Measures' Adoption? Mandatory Requirements, Behavioral Traits, and Structural Factors in the CAP Green Architecture

open access: yesApplied Economic Perspectives and Policy, EarlyView.
ABSTRACT To increase farmer adoption of green practices, the EU Common Agricultural Policy includes both mandatory (conditionality) and voluntary instruments (eco‐schemes–ECS– and more demanding, multi‐annual agri‐environment‐climate measures –AECM–). Building on the experiment of Barreiro‐Hurle et al.
L. Sanchez‐Mata   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

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