Results 161 to 170 of about 122,445 (270)

Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors

Advanced Science, EarlyView.
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li, Renjie Hu, Xiangping Zhao, Xi Wang, Wei Qin   +4 more
wiley   +1 more source

Magnetic tunnel junction made of abundant materials for memory and dynamic applications. [PDF]

Sci Rep
Cierpiał M, Maślanka D, Gubała K, Mojsiejuk J, Grochot K, Wrona J, Langer J, Nan T, Skowroński W.   +8 more
europepmc   +1 more source

Improved Direct Ink Writing of Liquid Metal Foams via Liquid Additives

Advanced Electronic Materials, EarlyView.
The ability to pattern liquid metal is useful for making soft electrical and thermal devices. Dispensing liquid metal from a nozzle naturally results in the formation of spheroidal droplets, making direct‐write printing challenging. Liquid metal foams containing pockets of air can extrude as filaments, albeit inconsistently.
Febby Krisnadi, Tushar Sakorikar, Man Hou Vong, Michael D. Dickey   +3 more
wiley   +1 more source

Role of the channel on the memory window of HfZrO_x ferroelectric field-effect transistors with p-type Si-doped InZnO_x channel. [PDF]

Sci Rep
Park H, Lim S, Lee S, Lee JW, Woo J.
europepmc   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Single-crystalline BaTiO₃-based ferroelectric capacitive memory via membrane transfer. [PDF]

Sci Adv
Zhang X, Lee S, Ryu JE, Suh JM, Kim TH, Barone MR, Parker NA, Lee G, Kim IJ, Yeo I, Shin J, Lee JS, Schlom DG, Chang CS, Seo JS, Yu S, Song MK, Kim J.   +17 more
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

High-power performance enhancement in PZT-based piezoceramics via hot-pressing. [PDF]

Nat Commun
Cao WT, Xu Z, Zhu Z, Geng Z, Lu JT, Zhong Z, Huang HF, Liu JX, Jiang Y, Liu YX, Gao W, Zhu D, Huang K, Zheng M, Bi K, Wang K.   +15 more
europepmc   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source