Results 101 to 110 of about 8,951 (266)
Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
Highly Flexible and Conformable ZnO/FeGa Magnetoelectric Heterostructures for Skin wound Healing
The magnetic field‐induced electric field generated by a highly flexile ZnO(piezoelectric)/FeGa(magnetostrictive) magnetoelectric heterostructure embedded in the low Young's modulus elastomer PDMS has been used to stimulate the wound healing processes.
Filippos Perdikos +17 more
wiley +1 more source
The Role of Hydrogen Heat Treatment during Ordering Processes in FePd- and FePt-Based Nanosize Films
The review presents experimental results obtained during the study of the solid-state reaction of A1→L10 ordering within the nanosize FePd and FePt films of equiatomic composition and doped with Ag, Au during annealing in both a vacuum and hydrogen.
M.Yu. Barabash, T.I. Verbytska, and Yu.M. Makogon
doaj +1 more source
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang +14 more
wiley +1 more source
Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han +17 more
wiley +1 more source
Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee +12 more
wiley +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Magnetically Boosted Water‐Splitting Performance in Metallic Glasses
A strategy for boosting water electrolysis efficiency using ultralow magnetic fields on soft‐magnetic MG wires is reported. Ni40Fe40P20 metallic glass exhibits superior overall water‐splitting performance (1.51 V @ 1000 mA cm−2) at 100 Oe, enabled by spin polarization in periodic surface magnetic domains to enhance orbital hybridization and net spin ...
Chaoqun Pei +9 more
wiley +1 more source
Large Temperature‐invariant Anomalous Nernst Effect in Non‐collinear Antiferromagnet Mn3Pt
Based on the noncollinear antiferromagnetic Mn3Pt thin films, the composition‐tunable Mn‐3d orbital states directly govern the Berry curvature. As a result, a giant and temperature‐invariant anomalous Nernst coefficient of 0.71 µV/K is achieved under Mn‐rich conditions.
Pengwei Gong +16 more
wiley +1 more source

