Results 321 to 330 of about 699,460 (405)

Advancement in Colloidal Metasurfaces: Approaches for Scalable Photonic Devices

open access: yesAdvanced Materials Interfaces, EarlyView.
This perspective explores colloidal metasurfaces composed of plasmonic and emitting nanoparticles assembled by laser interference lithography and template‐assisted self‐assembly methods. Precise design strategies achieve directional emission, low‐threshold lasing, and tunable photonic bandgaps.
Sezer Seçkin   +2 more
wiley   +1 more source

Aqueous Synthesis of Poly(ethylene glycol)‐Amide‐Norbornene‐Carboxylate for Modular Hydrogel Crosslinking

open access: yesAdvanced Materials Interfaces, EarlyView.
An all aqueous synthesis of poly(ethylene glycol)‐amide‐norbornene‐carboxylate (PEGaNBCA) is developed via reacting carbic anhydride with amino‐terminated PEG. PEGaNBCA is readily crosslinked into hydrogels by click chemistries. PEGaNBCA crosslinked thiol‐norbornene hydrogels are hydrolytically stable but can be rendered hydrolytically labile through ...
Nathan H. Dimmitt, Chien‐Chi Lin
wiley   +1 more source

Flexographic Printed Flexible Thermochromic Stickers for Smart Sensing Applications

open access: yesAdvanced Materials Interfaces, EarlyView.
Thermochromic complexes of 1‐butyl‐3‐methylimidazolium chloride and 4‐chloronickelate are synthesized and incorporated in hydroxypropyl cellulose‐based water inks. Films with 40 wt.% thermochromic complexes and three layers are flexographic printed on polypropylene tags in a process compatible with roll‐to‐roll manufacturing. After encapsulation with a
M. Morais   +9 more
wiley   +1 more source

Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

open access: yesAdvanced Materials Interfaces, EarlyView.
Control the structure and polarity of epitaxial GaN on 4H‐SiC substrate with precise interfacial configuration. Ga‐polar wz‐GaN with Si‐HT configuration, N‐polar wz‐GaN with Si‐TM and C‐TH configurations, whereas non‐polar 4|8 GaN with C‐MT configuration resulting from the polarity competition of GaN nucleation, respectively.
Haidong Yuan   +8 more
wiley   +1 more source

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