Results 231 to 240 of about 338,421 (294)

Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

open access: yesAdvanced Functional Materials, EarlyView.
In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee   +12 more
wiley   +1 more source

Microplastics from Wearable Bioelectronic Devices: Sources, Risks, and Sustainable Solutions

open access: yesAdvanced Functional Materials, EarlyView.
Bioelectronic devices (e.g., e‐skins) heavily rely on polymers that at the end of their life cycle will generate microplastics. For research, a holistic approach to viewing the full impact of such devices cannot be overlooked. The potential for devices as sources for microplastics is raised, with mitigation strategies surrounding polysaccharide and ...
Conor S. Boland
wiley   +1 more source

Roll‐to‐Roll Mechanical Exfoliation for Large‐Area van der Waals Films with Preserved Crystallographic Alignment

open access: yesAdvanced Functional Materials, EarlyView.
A roll‐to‐roll exfoliation method is demonstrated that preserves the crystallographic alignment of anisotropic 2D materials over large areas, enabling scalable fabrication of directional electronic and optoelectronic devices. Abstract Anisotropic 2D materials such as black phosphorus (BP), GeS or CrSBr, exhibit direction‐dependent optical and ...
Esteban Zamora‐Amo   +14 more
wiley   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

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