Results 171 to 180 of about 8,140,957 (328)

Interaction‐Driven Assembly Pathways in Heterogeneous Active Microrobotic Systems

open access: yesAdvanced Functional Materials, EarlyView.
Peanut‐ and cube‐shaped light‐powered microrobots exhibit distinct magnetic and photocatalytic responses that determine their heterogeneous self‐assembly. In the dark, magnetic dipole interactions drive colloidal copolymerization with cubes acting as nucleation centers, whereas under light irradiation, phoretic interactions compete with magnetic ...
Domenico Calabrò   +5 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Research on a new multiobjective combinatorial optimization algorithm

open access: yes, 2004
An real world engineering design problem is usually with multiple conflicting objectives, and it is easily lead to the difficulty to optimize these objectives at the same time. Multiobjective combinatorial optimization is not only an open theory problem,
Qin YF(秦永法), Zhao MY(赵明扬)
core   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim   +3 more
wiley   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj   +4 more
wiley   +1 more source

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