Results 171 to 180 of about 334,570 (258)

3D Concrete Printing of Triply Periodic Minimum Surfaces for Enhanced Carbon Capture and Storage

open access: yesAdvanced Functional Materials, EarlyView.
A 3D‐printable and carbon‐capturing concrete is developed by replacing cement with diatomaceous earth (DE), which enhances rheology, provides hierarchical porosity, and serves as a nucleation site for carbonation. Maximum absorption of 488.7 gCO2 kgcement−1 is achieved in 7 days, a 142% increase over conventional concrete, and the triply periodic ...
Kun‐Hao Yu   +9 more
wiley   +1 more source

Toward Robust Ionic Conductivity Determination of Sulfide‐Based Solid Electrolytes for Solid‐State Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The ionic conductivity of a solid electrolyte is just the “tip of the iceberg”. There are many parameters to consider to quantify it reliably in powdered solid electrolyte samples. Abstract All‐solid‐state batteries (ASSBs) are taking the lead as the next‐generation energy storage systems, mainly to the development of new solid electrolytes with high ...
Fariza Kalyk   +3 more
wiley   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

open access: yesAdvanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang   +12 more
wiley   +1 more source

Ruijsenaars wavefunctions as modular group matrix coefficients. [PDF]

open access: yesLett Math Phys
Di Francesco P   +4 more
europepmc   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee   +5 more
wiley   +1 more source

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