Results 111 to 120 of about 240,912 (243)

Қырым – аумақтық біртұтастық пен өзін-өзі анықтау және күш қолдану бойынша тақырыптық зерттеу

open access: yesHalyk̦aralyk̦ k̦atynastar ža̋ne halyk̦aralyk̦ k̦u̇k̦yk̦ seriâsì, 2016
Аталған мақалада Қырымда болған соңғы оқиға талданады. Мақаланың бірінші бөлімінде нақты фактілер келтіріледі. Мақалада автор аумақтық біртұтастық және өзін өзі анықтау құқығы қағидаларының критерилеріне, сондай ақ интервенцияға тиым салуға қатысты ...
M. Хартвиг
doaj  

Tailoring Microstructure in Copper‐Based Conductive Metal–Organic Frameworks for Enhanced Chemiresistive Sensing and Uptake of Sulfur Dioxide

open access: yesAdvanced Functional Materials, EarlyView.
Precursor‐ and solvent‐mediated synthesis yields four Cu3(HHTP)2 morphologies with distinct physicochemical, sorption, and sensing properties toward SO2. Uptake capacities correlate with BET surface area, while sensing performance scales with particle aspect ratio.
Patrick Damacet   +5 more
wiley   +1 more source

Emergent Spin‐Glass Behavior in an Iron(II)‐Based Metal–Organic Framework Glass

open access: yesAdvanced Functional Materials, EarlyView.
A one‐pot, solvent‐free synthesis yields an Fe2+‐based metal‐organic framework (MOF) glass featuring a continuous random network structure. The material exhibits spin‐glass freezing at 14 K, driven by topological‐disorder and short‐range magnetic frustration, showcasing the potential of MOF glasses as a plattform for cooperative magnetic phenomena in ...
Chinmoy Das   +8 more
wiley   +1 more source

Unraveling the Mg Loss Mechanism and Degradation Kinetics in Thermoelectric n‐Type Mg2Si‐Mg2Sn Solid Solutions

open access: yesAdvanced Functional Materials, EarlyView.
Mg‐based thermoelectrics are among the most promising candidates for power generation applications but their performance is compromised by Mg loss at device operation temperatures due to the higher chemical potential of Mg (μMg${\mu}_{\mathrm{Mg}}$) inside the material compared to the environment.
Aryan Sankhla   +2 more
wiley   +1 more source

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou   +8 more
wiley   +1 more source

Trap‐Modified Inverted Organic Photodetectors via Layer‐by‐Layer Processing with Poly(N‐vinylcarbazole) Additives

open access: yesAdvanced Functional Materials, EarlyView.
Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi   +10 more
wiley   +1 more source

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

open access: yesAdvanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang   +3 more
wiley   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

Home - About - Disclaimer - Privacy