Understanding Functional Materials at School
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley +1 more source
HyPepTox-Fuse: An interpretable hybrid framework for accurate peptide toxicity prediction fusing protein language model-based embeddings with conventional descriptors. [PDF]
Tran DT +4 more
europepmc +1 more source
Magnetic‐Field Tuning of the Spin Dynamics in the Quasi‐2D Van der Waals Antiferromagnet CuCrP2S6
This study reveals 2D character of the spin dynamics in CuCrP2S6, as well as complex field dependence of collective excitations in the antiferromagnetically ordered state. Their remarkable tuning from the antiferromagnetic to the ferromagnetic type with magnetic field, together with the non‐degeneracy of the magnon gaps favorable for the induction of ...
Joyal John Abraham +16 more
wiley +1 more source
A thematic-cognitive perspective for exploring the writing skills of children: a textual analysis using ENA. [PDF]
Zhang J +8 more
europepmc +1 more source
The Use of Discourse Markers in Spanish Language Learners’ Written Compositions
An Vande Casteele, Kim Collewaert
openalex +1 more source
Enthesis injuries are a worldwide healthcare problem. Biomimetic electrospun enthesis fascicle‐inspired scaffolds, with and without nano‐mineralization are developed. Human Mesenchymal Stromal cells (hMSCs) express the most balanced enthesis markers on the non‐mineralized scaffolds.
Alberto Sensini +11 more
wiley +1 more source
Composition of Domain Specific Modeling Languages - An Exploratory Study
Edmilson Campos +4 more
openalex +1 more source
Geographic, Ethnic and Linguistic Composition of Afghanistan: Methodological rich points of Language Policy and Planning [PDF]
Ayaz Ahmad
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Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

