Results 201 to 210 of about 1,267,239 (342)

Understanding Functional Materials at School

open access: yesAdvanced Functional Materials, EarlyView.
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley   +1 more source

Magnetic‐Field Tuning of the Spin Dynamics in the Quasi‐2D Van der Waals Antiferromagnet CuCrP2S6

open access: yesAdvanced Functional Materials, EarlyView.
This study reveals 2D character of the spin dynamics in CuCrP2S6, as well as complex field dependence of collective excitations in the antiferromagnetically ordered state. Their remarkable tuning from the antiferromagnetic to the ferromagnetic type with magnetic field, together with the non‐degeneracy of the magnon gaps favorable for the induction of ...
Joyal John Abraham   +16 more
wiley   +1 more source

A thematic-cognitive perspective for exploring the writing skills of children: a textual analysis using ENA. [PDF]

open access: yesFront Psychol
Zhang J   +8 more
europepmc   +1 more source

Revealing the Auxetic Behavior of Biomimetic Multimaterial and Region‐Specific Nanofibrous Fascicle‐Inspired Scaffolds via Synchrotron Multiscale Digital Volume Correlation: Innovative Building Blocks for the Enthesis Regeneration

open access: yesAdvanced Functional Materials, EarlyView.
Enthesis injuries are a worldwide healthcare problem. Biomimetic electrospun enthesis fascicle‐inspired scaffolds, with and without nano‐mineralization are developed. Human Mesenchymal Stromal cells (hMSCs) express the most balanced enthesis markers on the non‐mineralized scaffolds.
Alberto Sensini   +11 more
wiley   +1 more source

Composition of Domain Specific Modeling Languages - An Exploratory Study

open access: hybrid, 2013
Edmilson Campos   +4 more
openalex   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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