Results 201 to 210 of about 3,490,440 (331)

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Powering the Future: A Cobalt‐Based Catalyst for Longer‐Lasting Zinc–Air Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A novel N‐doped graphitic shell‐encapsulated Co catalyst reveals superior bifunctional ORR/OER activity in alkaline media, empowering outstanding liquid and quasi‐solid‐state ZAB activity. The system delivers long‐term durability, a peak power density of 127 mW cm−2 and successfully powers an LED and a mini fan.
Manami Banerjee   +10 more
wiley   +1 more source

Weaving the Digital Tapestry: Methods for Emulating Cohorts of Cardiac Digital Twins Using Gaussian Processes. [PDF]

open access: yesAnn Biomed Eng
Lanyon CW   +5 more
europepmc   +1 more source

Atomically Revealing Bulk Point Defect Dynamics in Hydrogen‐Driven γ‐Fe2O3 → Fe3O4 → FeO Transformation

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM uncovers the atomic‐scale mechanisms underlying hydrogen‐driven γ‐Fe2O3→Fe3O4→FeO reduction. In γ‐Fe2O3, oxygen vacancies cluster around intrinsic Fe vacancies, leading to nanopore formation, whereas in Fe3O4, vacancy aggregation is suppressed, preserving a dense structure.
Yupeng Wu   +14 more
wiley   +1 more source

Focus on Quantum Crystallography. [PDF]

open access: yesIUCrJ
Dominiak PM   +2 more
europepmc   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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