Results 181 to 190 of about 14,301 (245)

Updatable Closed‐Form Evaluation of Arbitrarily Complex Multiport Network Connections

Advanced Electronic Materials, EarlyView.
The inverse design of electrically large wave devices often uses reduced‐order multiport models with discrete optimization, requiring many evaluations of complex interconnections between subsystems that differ only in a few blocks. This paper introduces a closed‐form framework enabling efficient Woodbury low‐rank updates of related, previous ...
Hugo Prod'homme, Philipp del Hougne
wiley   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Computational Theory of Mathematical Universe (CTMU)

The Computational Theory of Mathematical Universe (CTMU) proposes that the mathematical universe possesses an intrinsic computational structure. This theory posits that a fundamental rule, combined with an initial state, generates mathematical entities.
openaire   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

From Top to Bottom: Manufacturing Process‐Context Aware Resolution of Energy Device Electrodes Through a 3D Diffusion Generative Model

Advanced Energy Materials, EarlyView.
The application of a generative diffusion model, enhanced with a training data augmentation pipeline retaining the manufacturing process context of electrode microstructures, leads to improved fidelity of the through‐plane tortuosity factor in the AI generated samples.
Victor Ramirez‐Camacho, Siwar Ben Hadj Ali, Maxence Desnoyers, Francisco Fernandez, Nassima Benammar, Alejandro A. Franco   +5 more
wiley   +1 more source

Pt Single‐Atom Catalysts on FTO for Optically Invisible pH‐Universal Hydrogen Evolution Electrodes

Advanced Energy Materials, EarlyView.
Comparison of the overpotential (η) at 10 mA cm−2 in acidic electrolyte of Pt SA on FTO (this work) and other literature. ABSTRACT Transparent hydrogen‐evolution electrodes are essential for photoelectrochemical and optoelectronic energy‐conversion devices, yet typically suffer from a trade‐off between catalytic activity and optical transmission. Here,
Jihyeon Kim, Xin Zhou, Dmitry E. Doronkin, Bidyut Bikash Sarma, Ana S. Dobrota, Natalia V. Skorodumova, Igor A. Pašti, Jochen Schmidt, Patrik Schmuki   +8 more
wiley   +1 more source