Results 131 to 140 of about 7,109,793 (234)

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

open access: yesAdvanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam   +7 more
wiley   +1 more source

SRAM Based Digital Custom Compute Engine for Improved Area Efficiency of AI Hardware

open access: yes
This paper presents a novel architecture utilizing a 10T SRAM cell for XNOR-based in-memory computing, aimed at mitigating the extensive routing challenges typically encountered in conventional in-memory computing systems. By integrating a full adder between in-memory multiplication cells, the proposed design achieves a 50% reduction in routing ...
Dhakad, Narendra Singh   +1 more
openaire   +2 more sources

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

open access: yesAdvanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

open access: yesAdvanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris   +7 more
wiley   +1 more source

Bioengineered Interfaces for Peripheral Nerve Sensory Restoration

open access: yesAdvanced Materials, EarlyView.
Half of amputees abandon their prosthetics for lack of feeling. This review charts the full path from peripheral nerve injury to restored sensation, through surgical, regenerative, noninvasive, and implanted approaches, and shows how injury type and interface material properties determine which strategy can deliver naturalistic feedback, and why ...
Sydney Swedick   +4 more
wiley   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

open access: yesAdvanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski   +5 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

Computation‐Less, Bias‐Free, and Ultra‐Broadband Photodetector for On‐Chip Edge Extraction

open access: yesAdvanced Materials, EarlyView.
A computation‐less, bias‐free, and ultra‐broadband photodetector directly converts local optical‐intensity gradients into signed photocurrents through a position‐dependent bi‐directional photoresponse. This intrinsic physical sensing mechanism enables single‐pixel edge extraction from the near‐infrared to the long‐wave infrared at room temperature ...
Jintao Fu   +8 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

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