Results 181 to 190 of about 373,352 (287)
Advanced gesture recognition in Indian sign language using a synergistic combination of YOLOv10 with Swin Transformer model. [PDF]
Rastogi U, Mahapatra RP, Kumar S.
europepmc +1 more source
Understanding Functional Materials at School
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley +1 more source
Hyperdimensional computing in biomedical sciences: a brief review. [PDF]
Cumbo F, Chicco D.
europepmc +1 more source
Magnetic‐Field Tuning of the Spin Dynamics in the Quasi‐2D Van der Waals Antiferromagnet CuCrP2S6
This study reveals 2D character of the spin dynamics in CuCrP2S6, as well as complex field dependence of collective excitations in the antiferromagnetically ordered state. Their remarkable tuning from the antiferromagnetic to the ferromagnetic type with magnetic field, together with the non‐degeneracy of the magnon gaps favorable for the induction of ...
Joyal John Abraham +16 more
wiley +1 more source
Neurosymbolic AI as an antithesis to scaling laws. [PDF]
Velasquez A +7 more
europepmc +1 more source
Enthesis injuries are a worldwide healthcare problem. Biomimetic electrospun enthesis fascicle‐inspired scaffolds, with and without nano‐mineralization are developed. Human Mesenchymal Stromal cells (hMSCs) express the most balanced enthesis markers on the non‐mineralized scaffolds.
Alberto Sensini +11 more
wiley +1 more source
Tradeoffs in automated financial regulation of decentralized finance due to limits on mutable turing machines. [PDF]
Charoenwong B, Kirby RM, Reiter J.
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Fusing Transformer-XL with bi-directional recurrent networks for cyberbullying detection. [PDF]
Hossain MM +6 more
europepmc +1 more source

